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Range and range straggling of oxygen implanted into silicon at energies between 2 and 20 MeV

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Abstract

Oxygen profiles in silicon implanted with energies between 2 and 20 MeV by means of a Tandem accelerator have been investigated with a microprobe after bevelling the sample surface. It is shown that the measured profiles correspond to the implantation profiles when the microprobe is operated with a well focussed 2 keV electron beam. The projected ion ranges and the profiles thus obtained are compared with theoretical profiles which have been calculated by a Monte Carlo simulation of the stopping procedure. Takingk=1.30k LSS for the electronic stopping coefficient in the LSS region up to 2.55 MeV and a constant value of 162 eV/Å for the electronic stopping at higher energies the calculation yields satisfactory range estimates, whereas the range straggling is systematically too small up to 13% in comparison with the experimental results.

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Author notes

  1. W. Tothemund

    Present address: Instutut für Angewandte Festkörperphysik der Fraunhofer Gesellschaft in Freiburg, Freiburg, Germany

Authors and Affiliations

  1. Institut für Physik, Universität, Postfach 500500, D-4600, Dortmund 50, Fed. Rep. Germany

    H. F. Kappert, K. F. Heidemann, D. Eichholz, E. te Kaat & W. Tothemund

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  1. H. F. Kappert
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  2. K. F. Heidemann
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  3. D. Eichholz
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  4. E. te Kaat
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Kappert, H.F., Heidemann, K.F., Eichholz, D. et al. Range and range straggling of oxygen implanted into silicon at energies between 2 and 20 MeV. Appl. Phys. 21, 151–158 (1980). https://doi.org/10.1007/BF00900677

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