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Nb-Si thin films as thermometers for low temperature bolometers

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Abstract

Thin alloy films with compositions leading to the Anderson metal-to-insulator transition can potentially lead to high detection sensitivities and adjustable input impedances as well as to excellent coupling to the heat absorber. We demonstrate some of these advantages in the case of Nb-Si films, whose bias power is shown to be at least 50 times that of NTD Ge detectors at about 30 mK.

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Dumoulin, L., Bergé, L., Lesueur, J. et al. Nb-Si thin films as thermometers for low temperature bolometers. J Low Temp Phys 93, 301–306 (1993). https://doi.org/10.1007/BF00693437

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