Abstract
We investigate thin-film resistive thermometry based on metal-to-insulator transition (niobium nitride) materials down to very low temperature. The variation of the NbN thermometer resistance has been calibrated versus temperature and magnetic field. High sensitivity in temperature variation detection is demonstrated through efficient temperature coefficient of resistance. The nitrogen content of the niobium nitride thin films can be tuned to adjust the optimal working temperature range. In the present experiment, we show the versatility of the NbN thin-film technology through applications in very different low-temperature use cases. We demonstrate that thin-film resistive thermometry can be extended to temperatures below 30 mK with low electrical impedance.
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Acknowledgements
We thank the micro- and nanofabrication facilities of Institut Néel CNRS: the Pôle Capteurs Thermométriques et Calorimétrie, Nanofab for their help in the preparation of the samples and the experiments. We have also benefited from the support of the Pole Cryogenie and Pole Electronique. The research leading to these results has received funding from the European Union’s Horizon 2020 Research and Innovation Programme, under Grant Agreement No. 824109, the European Microkelvin Platform (EMP), the EU project MERGING Grant No. 309150, ERC CoG Grant ULT-NEMS No. 647917; the authors also acknowledge the financial support from the ANR Project QNM Grant No. 040401, the Laboratoire d’excellence LANEF in Grenoble (ANR-10-LABX-51-01), the ANR project Tiptop ANR-16-CE09-0023; PDG acknowledges funding from Innovation Programme under the Marie Skłodowska-Curie Grant Agreement No. 754303 and the Fondation des Nanosciences (FCSN 2018 02D), and AR from Erasmus EU programme.
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Nguyen, T., Tavakoli, A., Triqueneaux, S. et al. Niobium Nitride Thin Films for Very Low Temperature Resistive Thermometry. J Low Temp Phys 197, 348–356 (2019). https://doi.org/10.1007/s10909-019-02222-6
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DOI: https://doi.org/10.1007/s10909-019-02222-6