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Deposition and characterization of diamond epitaxial thin films on silicon substrates

  • Surface Physics 1993
  • Published:
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Abstract

Heteroepitaxial diamond growth has been attempted on mirror-polished monocrystalline (001), (111), and (110) silicon substrates by microwave plasma CVD. The surface morphology and the crystallographic properties of the films were characterized by means of Scanning Electron Microscopy (SEM), Raman spectroscopy, X-ray diffraction, and X-ray and Raman pole-figure analysis. The results demonstrate epitaxial growth of diamond on both (001) and (111) oriented silicon substrates. Preliminary results give strong evidence for substrate-induced orientation of the diamond crystallites also on (110) oriented silicon substrate. The heteroepitaxy can be assigned to the oriented covalent bonding across the interface between diamond and silicon.

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Authors and Affiliations

  1. Fraunhofer-Institut für Schicht- und Oberflächentechnik (FhG-IST), Vogt-Kölln-Strasse 30, D-22527, Hamburg, Germany

    X. Jiang & C.-P. Klages

  2. Daimler-Benz AG, Materials Research, Wilhelm-Runge-Strasse 11, D-89081, Ulm, Germany

    M. Rösler, R. Zachai, M. Hartweg & H.-J. Füsser

Authors
  1. X. Jiang
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  2. C.-P. Klages
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  3. M. Rösler
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  4. R. Zachai
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  5. M. Hartweg
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  6. H.-J. Füsser
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Jiang, X., Klages, CP., Rösler, M. et al. Deposition and characterization of diamond epitaxial thin films on silicon substrates. Appl. Phys. A 57, 483–489 (1993). https://doi.org/10.1007/BF00331746

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  • DOI: https://doi.org/10.1007/BF00331746

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