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Homoepitaxial Diamond Growth by Plasma-Enhanced Chemical Vapor Deposition

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Novel Aspects of Diamond

Part of the book series: Topics in Applied Physics ((TAP,volume 121))

Abstract

Both carbon and silicon are group IV members, but carbon has the smaller atomic number. Diamond, with the same crystalline structure as that of silicon, is expected to act as the basic material for the next generation of high-power electronic, optoelectronic, bio/chemical electronic, quantum computing devices, etc. This is because diamond exhibits electrical properties similar to those of silicon, while having superior physical properties. In this chapter, the author reviewed and discussed the homoepitaxial growth of high-quality single-crystal diamond films with atomically flat surfaces, by using plasma-enhanced chemical vapor deposition (PECVD).

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Acknowledgments

The author sincerely thanks Prof. Satoshi Yamasaki, Dr. Hideyo Okushi, Dr. Daisuke Takeuchi, Dr. Masahiko Ogura, Dr. Toshiharu Makino, Dr. Hiromitsu Kato, Dr. Hitoshi Umezawa, Dr. Takehide Miyazaki of the National Institute of Advanced Industrial Science and Technology; Dr. Sung-Gi Ri of the National Institute for Materials Science; and Professor Takao Inokuma of Kanazawa University for fruitful discussions. This study was partly supported by a Grant-in-Aid for Young Scientists (A) (No. 24686074) from the Japan Society for the Promotion of Science, and Adaptable and Seamless Technology Transfer Program (A-STEP) and Core Research for Evolutional Science and Technology (CREST) from the Japan Science and Technology Agency.

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    Norio Tokuda

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    Nianjun Yang

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Tokuda, N. (2015). Homoepitaxial Diamond Growth by Plasma-Enhanced Chemical Vapor Deposition. In: Yang, N. (eds) Novel Aspects of Diamond. Topics in Applied Physics, vol 121. Springer, Cham. https://doi.org/10.1007/978-3-319-09834-0_1

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