Abstract
Advances of lithography and etching techniques now make it possible to laterally confine quasi-two-dimensional (2D) electron gases at semiconductor interfaces into wires or dots of widths below 100 nm.1 Since such widths are less than the mean free path of electrons at low temperatures, one induces quasi one-dimensional (1D) or zero-dimensional (0D) electronic behavior in the wires and dots, respectively, and observes novel phenomena in the transport2 and optical3 properties.
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Merkt, U., Sikorski, C., Alsmeier, J. (1989). Electrons in Lateral Microstructures on Indium. Antimonide. In: Fasol, G., Fasolino, A., Lugli, P. (eds) Spectroscopy of Semiconductor Microstructures. NATO ASI Series, vol 206. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6565-6_6
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DOI: https://doi.org/10.1007/978-1-4757-6565-6_6
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