Abstract
The far infrared transmission of laterally periodical microstructured GaAs heterojunctions is investigated at low temperature (T=2K) and in high magnetic fields (B<12T). At B=OT a well-defined resonance is observed that increases in frequency with increasing magnetic field. Position and strength of this resonance are discussed in terms of depolarization and quantization in wire grid structures.
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© 1987 Springer-Verlag Berlin Heidelberg
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Hansen, W., Kotthaus, J.P., Chaplik, A., Ploog, K. (1987). Electronic Excitations in Laterally Microstructured AlGaAs-GaAs Heterojunctions. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics. Springer Series in Solid-State Sciences, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83114-0_38
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DOI: https://doi.org/10.1007/978-3-642-83114-0_38
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