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Carrier recombination and transport for Sb2Se3-based homojunction thin film solar cells

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A Correction to this article was published on 10 November 2021

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Abstract

Antimony selenide (Sb2Se3) exhibits huge potential as an absorber for photovoltaic applications due to its narrow bandgap and high-absorption coefficient at visible wavelength. Herein, Sb2Se3-based homojunction thin film solar cells with a configuration of Glass/FTO/Cu-Sb2Se3/I-Sb2Se3/Al were fabricated via radio frequency magnetron sputtering. By analyzing the carrier recombination and transport, especially at the interface, it was found that large recombination resistance and small contact resistance are the keys for improving the current efficiency of 2.41%. Importantly, these devices exhibit excellent stability even after storage in air for 6 months without any protection.

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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Acknowledgements

We gratefully acknowledge the Chinese Scholarship Council for providing a PhD scholarship (201804910786). This publication is partially supported by the European Union through the European Regional Development Fund (ERDF), the Ministry of Higher Education and Research, the French Region of Brittany and Rennes Métropole.

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Authors and Affiliations

  1. ISCR (Institut des Sciences Chimiques de Rennes)-CNRS, UMR 6226, University of Rennes, 35000, Rennes, France

    Donglou Ren, Michel Cathelinaud, Hongli Ma & Xianghua Zhang

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  1. Donglou Ren
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  2. Michel Cathelinaud
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  3. Hongli Ma
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  4. Xianghua Zhang
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Correspondence to Donglou Ren or Xianghua Zhang.

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Ren, D., Cathelinaud, M., Ma, H. et al. Carrier recombination and transport for Sb2Se3-based homojunction thin film solar cells. MRS Advances 6, 609–612 (2021). https://doi.org/10.1557/s43580-021-00115-z

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  • DOI: https://doi.org/10.1557/s43580-021-00115-z

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