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Thermal Conductivity of the Materials Based on Silicon Carbide and Silicon Nitride

  • PHYSICAL METALLURGY. THERMAL AND THERMOCHEMICAL TREATMENT TECHNOLOGIES
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Russian Metallurgy (Metally) Aims and scope

Abstract

The temperature dependences of the thermal conductivity of silicon carbide- and silicon nitride-based materials prepared by various methods are presented. The thermal conductivity of silicon carbide–based materials prepared by reaction (SiSiC) and liquid-phase (LPSSiC) sintering and silicon nitride-based materials prepared by liquid phase sintering (SSN) is studied. The dependences of the thermal conductivity on the density, porosity, and content of oxide addition (for the LPSSiC and SSN materials) are presented.

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Funding

This study was performed in accordance with a science project and a research incorporated into the scientific planes of educational institutions of higher education of the Ministry of Education and Science of the Russian Federation, project no. 2019-0875.

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Authors and Affiliations

  1. Grebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences, 119034, St. Petersburg, Russia

    S. N. Perevislov

  2. Gorynin Central Research Institute of Structural Materials Prometey, National Research Center Kurchatov Institute, 191015, St. Petersburg, Russia

    M. A. Markov & A. V. Krasikov

  3. Parakhin Orel State Agrarian University, 302019, Orel, Russia

    Yu. A. Kuznetsov

  4. Russian State Agrarian University, Moscow Timiryazev Agricultural Academy, 127550, Moscow, Russia

    I. N. Kravchenko

  5. Blagonravov Institute of Engineering Science, Russian Academy of Sciences, 101990, Moscow, Russia

    I. N. Kravchenko

Authors
  1. S. N. Perevislov
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  2. M. A. Markov
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  3. Yu. A. Kuznetsov
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  4. I. N. Kravchenko
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  5. A. V. Krasikov
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Correspondence to I. N. Kravchenko.

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Translated by N. Kolchugina

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Perevislov, S.N., Markov, M.A., Kuznetsov, Y.A. et al. Thermal Conductivity of the Materials Based on Silicon Carbide and Silicon Nitride. Russ. Metall. 2020, 1477–1484 (2020). https://doi.org/10.1134/S0036029520130297

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  • DOI: https://doi.org/10.1134/S0036029520130297

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