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Recent Progress of Gr/Si Schottky Photodetectors

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Abstract

By combing the carrier mobility of graphene with the excellent light absorption properties of silicon, ultra-shallow Schottky junction can be obtained, and can exist stably for a long time. The photoelectric property of Schottky junction is determined not only by graphene and silicon semiconductor layer, but also by the interface layer between the two. Through a series of optimizations, the performance of graphene/silicon Schottky junction photodetectors can be continuously improved. As a result, graphene/silicon Schottky junctions more promising for the development of next generation photodetectors with its stability, ease of preparation and sensitivity. In this review, we firstly give a brief introduction to Gr Schottky junction photodetectors, and then present a comprehensive review on the recent progress of optimizing Gr/Si Schottky junction photodetectors in the past few years, including light management engineering, band engineering and interfacial engineering. Finally, the current challenges are summarized and further perspectives are outlined.

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Acknowledgements

This work was supported by Natural Science Foundation of Shandong Province with Grant Nos. ZR2020QE048 and ZR2019BEM031; National Natural Science Foundation of China with Grant No. 52073305.

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Authors and Affiliations

  1. School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao, 266580, People’s Republic of China

    Qingguo Shao, Hao Qi, Chao Li, Kunpeng Cai, Jianxia Dong, Xuhui Liu, Ning Cao & Xiaobei Zang

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  1. Qingguo Shao
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  2. Hao Qi
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  3. Chao Li
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  4. Kunpeng Cai
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  5. Jianxia Dong
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  6. Xuhui Liu
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  7. Ning Cao
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  8. Xiaobei Zang
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Contributions

QS had the idea for the article, HQ, CL performed the literature search and data analysis of light management engineering section, KC, JD do the same for the section of band engineering, NC and XZ do the same for the interfacial engineering, XL do the same for the first-principle analysis section and QS drafted the work. All authors read and approved the final manuscript.

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Correspondence to Qingguo Shao.

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Shao, Q., Qi, H., Li, C. et al. Recent Progress of Gr/Si Schottky Photodetectors. Electron. Mater. Lett. 19, 121–137 (2023). https://doi.org/10.1007/s13391-022-00384-2

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