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Vertically-Grown TFETs: An Extensive Analysis

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Abstract

TFET is an exciting device for ultra-low and low power implementations since it improves electrical performance while also providing steeper switching ratio. This study encloses with a review of the most essential VTFET characteristics, such as negative capacitance and switching mechanisms, as well as the performance of the FEHL (field-enhanced high-κ layer). Furthermore, this paper explores the various topologies of dual-material gate, triple-material gate structures and heterojunction V-TFETs. The vertically tunnelling junction commonly used on the source area by narrowing tunnel barrier width in order to accomplish a better sub-threshold swing and an enhanced drain current. This research provides detailed information on their physical and electrical characteristics, including as channel length, drain current, leakage current, switching ratio, threshold voltage, sub-threshold swing, and transconductance. This review paper summarizes their findings, which demonstrate that the dual and triple material V-TFET are the most intriguing low-power device options in the future.

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  1. Department of ECE, National Engineering College, Kovilpatti, India

    A. Sharon Geege & T. S. Arun Samuel

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Writing—literature search and analysis, original draft preparation: [A. Sharon Geege], Idea of the article, Resources, Supervision: [T.S Arun Samuel].

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Correspondence to A. Sharon Geege.

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Geege, A.S., Samuel, T.S.A. Vertically-Grown TFETs: An Extensive Analysis. Silicon 15, 3783–3796 (2023). https://doi.org/10.1007/s12633-022-02230-4

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