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The Influence of a TiN Film on the Electronic Contribution to the Thermal Conductivity of a TiC Film in a TiN-TiC Layer System

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Abstract

TiC and TiN films were deposited by reactive magnetron sputtering on Si substrates. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterization of the microstructure and interface structure have been carried out and the stoichiometric composition of TiC is determined. Thermal conductivity and interface thermal conductance between different layers in the films are evaluated by the transient thermo reflectance (TTR) and three-omega (3-ω) methods. The results showed that the thermal conductivity of the TiC films increased with temperature. The thermal conductivity of TiC in the absence of TiN is dominated by phonon contribution. The electronic contribution to the thermal conductivity of TiC in the presence of TiN is found to be more significant. The interface thermal conductance of the TiC/TiN interface is much larger than that of interfaces at Au/TiC, TiC/Si, or TiN/Si. The interface thermal conductance between TiC and TiN is reduced by the layer formed as a result of interdiffusion.

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Acknowledgments

This work was performed, in part, at the Analytical Instrumentation Facility (AIF), which is supported by the State of North Carolina and the National Science Foundation (Award No. ECCS-1542015). The AIF is a member of the North Carolina Research Triangle Nanotechnology Network (RTNN), a site in the National Nanotechnology Coordinated Infrastructure (NNCI).

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Authors and Affiliations

  1. Materials Science and Engineering Department, North Carolina State University, Raleigh, NC, 27695-7907, USA

    K. Jagannadham

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  1. K. Jagannadham
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Correspondence to K. Jagannadham.

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Manuscript submitted July 20 2017

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Jagannadham, K. The Influence of a TiN Film on the Electronic Contribution to the Thermal Conductivity of a TiC Film in a TiN-TiC Layer System. Metall Mater Trans A 49, 346–355 (2018). https://doi.org/10.1007/s11661-017-4401-6

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