Abstract
Transparent and conductive thin films of indium tin oxide were fabricated on glass substrates by the thermal evaporation technique. Tin doped indium ingots with low tin content were evaporated in vacuum (1.33 × 10−7 kpa) followed by an oxidation for 15 min in the atmosphere in the temperature range of 600–700°C. The structure and phase purity, surface morphology, optical and electrical properties of thin films were studied by x-ray diffractometry and Raman spectroscopy, scanning electron microcopy and atomic force microscopy, UV–visible spectrometry and Hall measurements in the van der Pauw configuration. The x-ray diffraction study showed the formation of the cubical phase of polycrystalline thin films. The morphological analysis showed the formation of ginger like structures and the energy dispersive x-ray spectrum confirmed the presence of indium (In), tin (Sn) and oxygen (O) elements. Hall measurements confirmed n-type conductivity of films with low electrical resistivity (ρ) ∼ 10−3 Ω cm and high carrier concentration (n) ∼ 1020 cm−3. For prevalent scattering mechanisms in the films, experimental data was analyzed by calculating a mean free path (L) using a highly degenerate electron gas model. Furthermore, to investigate the performance of the deposited films as a transparent conductive material, the optical figure of merit was obtained for all the samples.
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28 February 2018
In the original article there is an error in Equation 10. Following is the corrected equation.
References
H.R. Fallah, M. Ghasemi, and A. Hassanzadeh, Physica E 39, 69 (2007).
M.J. Alam and D.C. Cameron, Thin Solid Films 377, 455 (2000).
B.G. Lewis and D.C. Paine, Mater. Res. Bull. 25, 22 (2000).
H. Ohta, M. Orita, M. Hirano, H. Tani, H. Kawazoe, and H. Hosono, Appl. Phys. Lett. 76, 2740 (2000).
B.J. Chen, X.Q. Lin, L.F. Cheng, C.S. Lee, W.A. Gambling, and S.T. Lee, J. Phys. D Appl. Phys. 34, 30 (2001).
G. Neri, A. Bonavita, G. Micali, G. Rizzo, E. Callone, and G. Carturan, Sens. Actuators B, 132, 224 (2008).
A.D.M. Rosman, A.H.A. Razak, M.F. Azmi, S.A.M. Al Junid, A.K. Halim, and M.F.M. Idros, in IEEE International Conference, pp. 546–550 (2016).
L.L. Jiang, X. Zeng, M. Li, M.Q. Wang, T.Y. Su, X.C. Tian, and J. Tang, RSC Adv. 7, 9316 (2017).
J. Lee, D. Lim, K. Yang, and W. Choi, J. Cryst. Growth 326, 50 (2011).
I. Madhi, W. Meddeb, B. Bouzid, M. Saadoun, and B. Bessais, Appl. Surf. Sci. 355, 242 (2015).
Q. Ouyang, W. Wang, Q. Fu, and D. Dong, Thin Solid Films 623, 31 (2017).
K. Daoudi, B. Canut, M.G. Blanchin, C.S. Sandu, V.S. Teodorescu, and J.A. Roger, Mater. Sci. Eng. C 21, 313 (2002).
S. Licht, A.J. Bard, and M. Stratmann, Encyclopedia of Electrochemistry, Vol. 6: Semiconductor electrodes and Photoelectrochemistry. (Wiley-VCH, Gmbh, 2002), p. 25.
J.S. Cho, K.H. Yoon, and S.K. Koh, Thin Solid Films 368, 111 (2000).
M.N. Rezaie, N. Manavizadeh, E.M.N. Abadi, E. Nadimi, and F.A. Boroumand, Appl. Surf. Sci. 392, 549 (2017).
S. Parthiban, E. Elangovan, K. Ramamurthi, D. Kanjilal, K. Asokan, R. Martins, and E. Fortunato, J. Phys. D Appl. Phys. 44, 085404 (2011).
M. Thirumoorthi and J.T.J. Prakash, Superlattices Microstruct. 85, 237 (2015).
M. Thirumoorthi and J.T.J. Prakash, J. Asian Ceram. Soc. 04, 24 (2016).
K. Mageshwari and R. Sathyamoorthy, Mater. Sci. Semicond. Process. 16, 337 (2013).
H. Siddiqui, M.S. Qureshi, and F.Z. Haque, Optik Int. J. Light Electron Opt. 125, 4663 (2014).
C.Y. Wang, Y. Dai, J. Pezoldt, B. Lu, Th Kups, V. Cimalla, and O. Ambacher, Cryst. Growth Des. 8, 1257 (2008).
O.M. Berengue, A.D. Rodrigues, C.J. Dalmaschio, A.J.C. Lanfredi, E.R. Leiteand, and A.J. Chiquito, J. Phys. D Appl. Phys. 43, 045401 (2010).
M.K.M. Ali, K. Ibrahim, O.S. Hamad, M.H. Eisa, M.G. Faraj, and F. Azhari, Rom. J. Phys. 56, 730 (2011).
S.B. Rana, P. Sing, A.K. Sharma, A.W. Carbonari, and R. Dogra, J. Optoelectron. Adv. Mater. 12, 257 (2010).
J.M. Gómez, C. Canaria, R.O. Burgos, C.A. Ortiz, G.I. Supelano, and C.P. Vargas, in Journal of Physics: Conference Series—IOP Publishing, p. 012091 (2016).
T. Konry and R.S. Marks, Thin Solid Films 492, 313 (2005).
E.S. Raj and K.L. Choy, Mater. Chem. Phys. 82, 489 (2003).
H.Y. Lai, T.H. Chen, and C.H. Chen, Mater. Lett. 65, 3336 (2011).
T.H. Fang, W.J. Chang, C.M. Lin, and W.C. Lien, Appl. Surf. Sci. 254, 3436 (2008).
A. Behera and S. Aich, Surf. Interface Anal. 47, 805 (2015).
C.S. Chang, K.H. Hou, M.D. Ger, C.K. Chung, and J.F. Lin, Surf. Coat. Technol. 288, 135 (2016).
M. Gulen, G. Yildirim, S. Bal, A. Varilci, I. Belenli, and M. Oz, J. Mater. Sci. Mater. Electron. 24, 467 (2013).
J.H. Lee, Y.H. Kim, S.J. Ahn, T.H. Ha, and H.S. Kim, Mater. Sci. Eng. B 199, 37 (2015).
R.N. Chauhan, R.S. Anand, and J. Kumar, Thin Solid Films 556, 253 (2014).
U. Betz, M. Kharrazi Olsson, J. Marthy, M.F. Escola, and F. Atamny, Surf. Coat. Technol. 200, 5751 (2006).
G. Lavareda, C.N. de Carvelho, E. Fortunato, A.R. Ramos, E. Elves, O. Conde, and A. Amaral, Non Cryst. Solids 352, 2311 (2006).
B. Thangaraju, Thin Solid Films 402, 71 (2002).
J.G. Lu, Z.Z. Ye, Y.J. Zeng, L.P. Zhu, L. Wang, J. Yuan, B.H. Zhao, and Q.L. Liang, J. Appl. Phys. 100, 073714 (2006).
T. Koida and M. Kondo, J. Appl. Phys. 99, 123703 (2006).
T. Koida and M. Kondo, J. Appl. Phys. 101, 063713 (2007).
A.K. Kulkarni and S.A. Knickerbocker, Thin Solid Films 220, 321 (1992).
J.Y. Zheng, S.H. Bao, Y. Juo, and P. Jin, ACS Appl. Mater. Interfaces 6, 1351 (2014).
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A correction to this article is available online at https://doi.org/10.1007/s11664-018-6173-1.
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Sofi, A.H., Shah, M.A. & Asokan, K. Structural, Optical and Electrical Properties of ITO Thin Films. J. Electron. Mater. 47, 1344–1352 (2018). https://doi.org/10.1007/s11664-017-5915-9
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DOI: https://doi.org/10.1007/s11664-017-5915-9