Abstract
Quantum well infrared detector has been extensively applied in military and civil fields. In order to break through the bottleneck of low quantum efficiency, a novel quantum well infrared photodetector based on SiO2–dielectric–metal microstructure has been proposed and investigated in this paper. The detector is composed of three layers, which are SiO2 particle array on the top, quantum well in the middle layer and metallic film at the bottom. The results shown that the SiO2–dielectric–metal sandwich structure can absorb electromagnetic waves between 14 and 15 µm which the quantum well infrared photodetector work at. In addition, we have studied the influence of the parameters of the detector structure, it is found that the absorption band is insensitive to period of photodetector microstructure and the thickness of SiO2 layer, which indicates the quantum well infrared photodetector has a stable performance. The quantum well infrared detector proposed in this paper has large potential applications in the miniaturization and integration of optoelectronic devices in the future.
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This research was funded by the National Natural Science Foundation of China, Grant numbers 61875089 and 11374161, by the Kunshan and Nanjing University of Information Science and Technology (NUIST) intelligent sensor research center project.
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Yang, K., Ni, B., Ge, H. et al. A high-performance quantum well infrared photodetector based on semiconductor–metal periodic microstructure. Opt Quant Electron 53, 160 (2021). https://doi.org/10.1007/s11082-021-02799-x
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DOI: https://doi.org/10.1007/s11082-021-02799-x