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Formation of SiGe/Si Heterostructures by Low-Temperature Germanium Ion Implantation

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Amorphous and Crystalline Silicon Carbide IV

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 71))

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Abstract

Si1-xGex alloys were formed by high-dose (on the order of 1016 cm−2) germanium ion implantation into Si. It was found that the crystalline quality of the SiGe layer was improved by maintaining the substrate at low temperature during implantation. Cross-sectional transmission electron micrographs indicated a considerable reduction in the end-of-range defects. This improvement was further confirmed by electrical characterization of p-n junctions formed in the SiGe layer.

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Author information

Authors and Affiliations

  1. Hitachi Reserach Laboratory, Hitachi, Ltd., 4026 Kuji, Hitachi-shi, Ibaraki 319-12, Japan

    K. Shoji, A. Fukami & T. Nagano

  2. Institute of Applied Physics, University of Tsukuba, Tsukuba-shi, Ibaraki 305, Japan

    T. Tokuyama

  3. Microelectronics Laboratory, Santa Clara University, Santa Clara, CA, 95053, USA

    A. Gupta & C. Y. Yang

Authors
  1. K. Shoji
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  2. A. Fukami
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  3. T. Nagano
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  4. T. Tokuyama
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  5. A. Gupta
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  6. C. Y. Yang
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Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, Santa Clara University, 95053, Santa Clara, CA, USA

    Cary Y. Yang  & M. Mahmudur Rahman  & 

  2. School of Engineering, Howard University, 20059, Washington, DC, USA

    Gary L. Harris

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© 1992 Springer-Verlag Berlin Heidelberg

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Shoji, K., Fukami, A., Nagano, T., Tokuyama, T., Gupta, A., Yang, C.Y. (1992). Formation of SiGe/Si Heterostructures by Low-Temperature Germanium Ion Implantation. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_59

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  • DOI: https://doi.org/10.1007/978-3-642-84804-9_59

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84806-3

  • Online ISBN: 978-3-642-84804-9

  • eBook Packages: Springer Book Archive

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