Abstract
We propose a two-step hydrogen-ion implantation approach for realizing crystalline-defect-free Si1-xGex channels for potential use in gate-all-around field-effect-transistors beyond the 3 nm transistor-design rule. A dislocation sink was created in a projected range of ion implantation 100 and 200 nm above the strain-relaxed Si0.7Ge0.3 layer and Si substrate interface using two-step H+ -ion implantation. Doses of 5 × 1015 and 2 × 1015 atoms/cm2 were used at 100 and 200 nm, respectively, above the interface, and post-annealing was performed at 800 °C for 30 min. The two-step implantation annihilated the misfit and threading dislocations near the relaxed Si0.7Ge0.3/Si interface. The annihilation efficiency strongly depended on the location and second ion dose of the implantation: the maximum annihilation efficiency was obtained at 100 and 200 nm above the interface with multiple H+-ion doses of 5 × and 2 × 1015 atoms/cm2.
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This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2021R1A4A10520850), BrainKorea21 Four.
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Park, JH., Park, JG. Two-step hydrogen-ion implantation annihilation of threading dislocation defects in strain-relaxed Si0.7Ge0.3. J. Korean Phys. Soc. 79, 1151–1156 (2021). https://doi.org/10.1007/s40042-021-00340-7
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DOI: https://doi.org/10.1007/s40042-021-00340-7