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Study of Structural, Morphological and Optical, Properties of Fe Doped SnO2 Semiconductor Thin Films Prepared by Sol-Gel Technique

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Proceedings of the Third International Symposium on Materials and Sustainable Development (SMSD 2017)

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Abstract

The undoped and iron doped tin oxide thin films were deposited on glass substrates by sol-gel dip coating technique, using tin chloride and iron III chloride as the starting materials. The effect of method conditions and Fe doping on the structural, morphological and optical properties of applied thin films have been studied by X-ray diffraction (XRD), and UV–vis spectroscopy. Surface topography of thin films was examined by atomic force microscopy (AFM).

XRD patterns showed an increase in peak intensities of the rutile and cubic crystalline phases of SnO2 by increasing the Fe content. SnO2 nanoparticles in the range of 9–20 nm size were obtained by the Scherrer equation using FWHM (Full Width at Half Maximum) values of the main peaks in the XRD diffraction pattern when calcined at 500 °C.

The UV–Vis–spectroscopy analyses have shown that all the thin films were transparent in the visible region with an average transmittance ranging from 70% to 87%. And showed a direct band gap reducing with increase in Fe3+ doping from 3.82 to 3.72 eV.

AFM images shown thin films with different contents of Fe. The effect of Fe concentration has been discussed.

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Correspondence to S. Benkara .

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Benkara, S., Ghamri, H., Zaabat, M. (2018). Study of Structural, Morphological and Optical, Properties of Fe Doped SnO2 Semiconductor Thin Films Prepared by Sol-Gel Technique. In: Abdelbaki, B., Safi, B., Saidi, M. (eds) Proceedings of the Third International Symposium on Materials and Sustainable Development. SMSD 2017. Springer, Cham. https://doi.org/10.1007/978-3-319-89707-3_71

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