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Microstructural and Reliability Issues of TSV

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3D Microelectronic Packaging

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 57))

Abstract

The copper pumping problem exemplifies the complex reliability issues still to be resolved for TSV structures. From a materials science perspective the reliability issues presented by TSVs are linked to manufacturing processes and the resultant microstructure formed. Routine finite element-based reliability studies that treat the TSV filler as an isotropic and homogeneous material are not capable of providing a sufficiently thorough explanation of the observed copper extrusion/intrusion behavior. Rather, the material behavior and properties at multiple scales are required as the input data for effective reliability analysis of three-dimensional TSV stacked ICs. Such 3-D ICs also push the scale of materials to a limit where the anisotropy of material properties, recovery, recrystallization, and time-dependent phase morphological evolution further complicate reliability issues. This chapter reviews both experimental and modeling approaches that address the microstructural and reliability issues of TSVs. Crystal plasticity-based finite element method and phase field crystal method with an inherently multiscale nature are identified as promising modeling techniques to enable atomistically informed reliability analysis of TSVs.

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Notes

  1. 1.

    It should be noted that the exact value of the stress for a wavenumber shift may depend on the materials properties used in secular equation (i.e., set of equations in the reference axes which may be different than that of materials crystallographic reference system). It can lie in the range of 430–520 MPa [17].

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Acknowledgements

The editors would like to thank Prof. Tengfei Jiang from University of Central Florida for her critical review of this chapter. The authors (PK and ID) acknowledge financial support for some of the reported work by the National Science Foundation (DMR-0513874 and DMR-1309843), Cisco Research Council, and the Semiconductor Research Corporation. The contributions of, and collaborations with several colleagues (Dr. Lutz Meinshausen, formerly of Washington State University, and currently at Global Foundries, Dresden, Germany; Dr. Tae-Kyu Lee, formerly of Cisco Systems, and currently at Portland State University; Dr. Ravi Mahajan of Intel Corporation; Dr. Vijay Sarihan of Freescale Semiconductor, and Professor Muhannad Bakir of Georgia Tech) are gratefully acknowledged. The assistance of current and former colleagues (Dr. Hanry Yang of Washington State University, and Dr. Zhe Huang, formerly of Washington State University, and currently at Seagate Technologies) with the literature survey is also gratefully acknowledged. The author (ZH) acknowledges financial support for his research by the Pearl River Science and Technology Nova Program of Guangzhou under grant no. 2012J2200074, the National Natural Science Foundation of China (NSFC) under grant no. 51004118, and Guangdong Natural Science Foundation under grant no. 2015A030312011. The author (ZH) also acknowledges useful discussions with Dr. F. Roters of Max Planck Institute for Iron Research on the CPFE method and Prof. N. Provatas of McGill University on phase crystal models.

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Authors and Affiliations

  1. Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India

    Praveen Kumar

  2. School of Mechanical and Materials Engineering, Washington State University, Pullman, WA, 99164, USA

    Indranath Dutta

  3. School of Materials Science and Engineering, Sun Yat-sen University, 135 West Xingang Road, Guangzhou, 510275, China

    Zhiheng Huang

  4. The Wolfson School of Mechanical, Electrical and Manufacturing Engineering, Loughborough University, Loughborough, Leicestershire, LE11 3TU, UK

    Paul Conway

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  1. Intel Corporation, Chandler, Arizona, USA

    Yan Li

  2. Intel Corporation, Chandler, Arizona, USA

    Deepak Goyal

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Kumar, P., Dutta, I., Huang, Z., Conway, P. (2017). Microstructural and Reliability Issues of TSV. In: Li, Y., Goyal, D. (eds) 3D Microelectronic Packaging. Springer Series in Advanced Microelectronics, vol 57. Springer, Cham. https://doi.org/10.1007/978-3-319-44586-1_4

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  • DOI: https://doi.org/10.1007/978-3-319-44586-1_4

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  • Publisher Name: Springer, Cham

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  • Online ISBN: 978-3-319-44586-1

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