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A model for the InGaAs/InP single photon avalanche diodes with multiple-quantum wells in the charge multiplication region

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Abstract

In this work, we study the InP-InGaAs single photon avalanche diodes with multiple InGaAs quantum wells in the multiplication region for quantum information and communication. The compositions of InGaAs quantum wells are adjusted to give transition wavelength of 1.55. Simulation results show that three orders of magnitude improvement of dark count probability and an order of magnitude improvement of single photon quantum efficiency are expected with the adaption of multiple quantum-wells in the multiplication region. The improvement dark count probability is due to the difference of ionization coefficients for electrons and holes caused by the large difference between the conduction and valence band edge of multiple quantum-well layers inserted in the multiplication layer.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering and Center for Quantum Information Processing, University of Seoul, Seoul, 02504, Korea

    H. S. Seo & D. Ahn

  2. Department of Electronics Engineering, Catholic University of Daegu, Hayang, 38436, Korea

    S. H. Park

  3. Quantum Laboratory, SK Telecom, Seongnam, 13595, Korea

    S. Kwak

  4. Physics Department, Charles E. Schmidt College of Science, Florida Atlantic University, Boca Raton, 33431-0991, USA

    D. Ahn

Authors
  1. H. S. Seo
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  2. S. H. Park
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  3. S. Kwak
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  4. D. Ahn
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Correspondence to D. Ahn.

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Seo, H.S., Park, S.H., Kwak, S. et al. A model for the InGaAs/InP single photon avalanche diodes with multiple-quantum wells in the charge multiplication region. Journal of the Korean Physical Society 72, 289–293 (2018). https://doi.org/10.3938/jkps.72.289

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  • DOI: https://doi.org/10.3938/jkps.72.289

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