Abstract
In this work, we investigated the effect of the Al2O3 cyclic ratio and the annealing temperature on the crystallinity and the resistive switching behavior of HfO2 and HfAlO x cells. The microstructures of the HfO2 and the HfAlO x films were measured by using X-ray diffraction and transmission electron microscopy in order to observe the dependencies of the electro-forming and resistive switching behaviors on the crystallinity. The formation of grain boundaries in connection with a microstructural change from an amorphous to a poly-crystalline phase is expected to be responsible for the leakage current and for the formation of conductive path formation.
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Mok, IS., Kim, J., Lee, K. et al. Effect of crystallinity on the resistive switching behavior of HfAlO x films. Journal of the Korean Physical Society 64, 419–423 (2014). https://doi.org/10.3938/jkps.64.419
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DOI: https://doi.org/10.3938/jkps.64.419