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Electrical and structural properties of a Co-sputtered SiO2-Pt composite thin film for an embedded resistor

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Abstract

In this study, SiO2-Pt nano-composite ceramic metal (cermet) was developed to control the resistivity and the temperature coefficient of resistance (TCR). The experiments were conducted under various Ar pressures to find the optimum conditions for high resistivity and low TCR. Pt particles were uniformly dispersed in the SiO2 matrix, and the number of Pt particles changed with the Ar pressure. A stable resistivity value of 880 ∼ 193820 µΩ-cm was obtained at 3 ∼ 20 mtorr, and the temperature coefficient of resistance was in the range of 383.189 ∼ −3229.14 ppm/K.

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Authors and Affiliations

  1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746, Korea

    Seung-Kyu Lim, Seong-Hun Na, Eun-Mi Park, Jin-Soo Kim & Su-Jeong Suh

  2. Advanced Materials and Process Research for IT, Sungkyunkwan University, Suwon, 440-746, South Korea

    Su-Jeong Suh

Authors
  1. Seung-Kyu Lim
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  2. Seong-Hun Na
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  3. Eun-Mi Park
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  4. Jin-Soo Kim
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  5. Su-Jeong Suh
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Correspondence to Su-Jeong Suh.

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Lim, SK., Na, SH., Park, EM. et al. Electrical and structural properties of a Co-sputtered SiO2-Pt composite thin film for an embedded resistor. Journal of the Korean Physical Society 61, 1056–1059 (2012). https://doi.org/10.3938/jkps.61.1056

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  • DOI: https://doi.org/10.3938/jkps.61.1056

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