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Study on Structural and Dielectric Properties of Ultra-Low-Fire Integratable Dielectric Film for High-Frequency and Microwave Application

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Abstract

In this study, ultra-low-fire ceramic composites of Zn2Te3O8-30 wt.%TiTe3O8 (ZTT) were prepared by a solid-state reaction method. Densified at 600°C, the best microwave dielectric properties at 8.5 GHz were measured with the ε r , tanδ, Q × f, and τ f as 25.6, 1.5 × 10−4, 56191 GHz and 1.66 ppm/°C, respectively. Thin films of ultra-low-fire ZTT were prepared by a radio-frequency magnetron sputtering method. ZTT films which deposited on Au/NiCr/SiO2/Si (100) substrates at 200°C showed good adhesion. From ultra-low-fire ceramic to ultra-low-fire ZTT thin films, the latter maintained all the good high-frequency dielectric properties of the former: high dielectric constant (ε r  ∼ 25) and low dissipation factor (tanδ < 5×10−3), low leakage current density (∼ 10−9 A/cm2) and ultra low processing temperature. These excellent properties of the ultra-low-fire ZTT thin film make it possible to be integrated in MMIC and be applied in the research of GaN and GaAs MOSFET devices.

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Acknowledgements

This work was supported by the Innovation Foundation of Collaboration Innovation Center of Electronic Materials and Devices (No. ICEM2015-4002).

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, 610054, Sichuan, People’s Republic of China

    Sheng Qu, Jihua Zhang, Kaituo Wu, Lei Wang & Hongwei Chen

  2. Collaboration Innovation Center of Electric Materials and Devices, University of Electronic Science & Technology of China, Chengdu, 610054, Sichuan, People’s Republic of China

    Sheng Qu, Jihua Zhang, Kaituo Wu, Lei Wang & Hongwei Chen

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  1. Sheng Qu
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  2. Jihua Zhang
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  3. Kaituo Wu
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Correspondence to Jihua Zhang.

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Qu, S., Zhang, J., Wu, K. et al. Study on Structural and Dielectric Properties of Ultra-Low-Fire Integratable Dielectric Film for High-Frequency and Microwave Application. J. Electron. Mater. 47, 1944–1951 (2018). https://doi.org/10.1007/s11664-017-5995-6

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  • DOI: https://doi.org/10.1007/s11664-017-5995-6

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