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Effects of initial growth mode on the electrical properties of atomic-layer-deposited Hfo2 films

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Abstract

The effects of the initial growth mode on the electrical properties of atomic layer deposition-grown HfO2/ SiO2/Si metal-oxide-semiconductor devices were investigated using in-situ medium energy ion scattering (MEIS). MEIS results clearly showed that wet chemical oxide has a more layer-like growth at an initial growth stage than a thermal oxide starting surface. On the high OH group surface, less shifting of the flat band voltage and mininal hysteresis in the C-V curve was observed primarily due to structural uniformity in the HfO2 dielectric. The method of surface preparation directly influenced the growth morphologies. These morphologies at the initial growth stage strongly affected C-V quality and charge trapping.

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References

  1. B. H. Lee, L. Kang, R. Nieh, W.-J, Qi, and J. C. Lee, Appl. Phys. Lett. 76, 1926 (2000).

    Article  CAS  Google Scholar 

  2. M. Balog, M. Schieber, M. Michiman, and S. Patai, Thin Solid Films 41, 247 (1977).

    Article  CAS  Google Scholar 

  3. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000).

    Article  CAS  Google Scholar 

  4. H. Kim, P. C. Mclntyre, and K. C. Saraswat, Appl. Phys. Lett. 82, 106 (2003).

    Article  CAS  Google Scholar 

  5. H. S. Chang, H. Hwang, M.-H. Cho, and D. W. Moon, Appl. Phys. Lett. 86, 032104 (2005).

    Article  Google Scholar 

  6. J. F. van der Veen, Surf. Sci. Rep. 5 199 (1985).

    Article  Google Scholar 

  7. E. P. Gusev, H. C. Lu, T. Gustafsson, and E. Garfunkel, Phys. Rev. B 52, 1759 (1995).

    Article  CAS  Google Scholar 

  8. H. Park, M. Hasan, M. Jo, and H. Hwang, Electron. Mater. Lett. 3, 75 (2007).

    CAS  Google Scholar 

  9. R. S. Johnson, G. Lucovsky, and I. Baumvol, J. Vac. Sci. Technol. A 19, 1353 (2001).

    Article  CAS  Google Scholar 

  10. G. D. Wilk, M. L. Green, M.-Y. Ho, B. W. Busch, T. W. Sorch, F. P. Klemens, B. Brijs, R. B. van Dover, A. Kornblit, T. Gustafsson, E. Garfunkel, S. Hillenius, D. Monroe, J. M. Hergenrother, VLSI Tech. Dig., p. 88 (2002).

  11. H. Harris, K. Choi, N. Mehta, A. Chandolu, N. Biswas, G. Kipshidze, S. Nikishin, S. Gangopadhyay, and H. Temkin, Appl. Phys. Lett. 81, 1065 (2002).

    Article  CAS  Google Scholar 

  12. A. Stesmans and V. V. Afanas’ev, Appl. Phys. Lett. 82, 4074 (2003).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Energy and Semiconductor Center, Korea Institute of Ceramic Engineering and Technology, 30 Gyeongchung Rd., Sindun-myeon, Icheon-si, 467-843, Gyeonggi, Korea

    Hyo Sik Chang

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  1. Hyo Sik Chang
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Correspondence to Hyo Sik Chang.

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Chang, H.S. Effects of initial growth mode on the electrical properties of atomic-layer-deposited Hfo2 films. Electron. Mater. Lett. 5, 187–190 (2009). https://doi.org/10.3365/eml.2009.12.187

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  • DOI: https://doi.org/10.3365/eml.2009.12.187

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