Abstract
A possibility of separate determination of concentrations of donors and acceptors in manyvalley semiconductors on the basis of temperature dependence of total concentration of charge carriers is shown. As distinct from a single-valley semiconductor, it is necessary to take into account that effective mass of density of states and effective ionization energy are not constant, but depend on temperature.
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Blakemore, J.S., Semiconductor Statistics, New York: Dover, 2002.
Vahanyan, A.I., FTP, 1982, vol. 16. p. 3.
Vahanyan, A.I. and Baghiyan, Y.M., J. Contemp. Phys. (Armenian Ac. Sci.), 2014, vol. 49, p. 165.
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Original Russian Text © A.I. Vahanyan, Y.M. Baghiyan, 2014, published in Izvestiya NAN Armenii, Fizika, 2014, Vol. 49, No. 5, pp. 339–341.
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Vahanyan, A.I., Baghiyan, Y.M. Determination of concentrations of donors and acceptors in many-valley semiconductors. J. Contemp. Phys. 49, 218–219 (2014). https://doi.org/10.3103/S1068337214050053
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DOI: https://doi.org/10.3103/S1068337214050053