Skip to main content
SpringerLink
Log in

Features of hopping conductivity in weakly doped and weakly compensated semiconductor quantum wells

  • Published:
Journal of Contemporary Physics (Armenian Academy of Sciences) Aims and scope

Abstract

Main features of hopping transport in quantum wells in the conditions of low doping and low compensation are considered. Based on the features of the classical law of interaction between the impurities and on the percolation problem in quantized wells, it is shown that the specific resistance and activation energy of donor centers of the well are determined by the doping parameters and sharply depend on the width of the well.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Proceedings of 10th Conference on Hopping and Related Phenomena, Trieste, Italy, 2003.

  2. Pronin, A.A. et al., FTT, 2007, vol. 49, p. 1336.

    Google Scholar 

  3. Zimin, S.P., FTP, 2006, vol. 48, p. 1388.

    Google Scholar 

  4. Ravich, Yu.I. and Nemov, S.A., FTT, 2002, vol. 36, p. 3.

    Google Scholar 

  5. Poklonsky, N.A., Lopatin, S.Yu., and Zabrodsky, A.G., FTP, 2000, vol. 42, p. 432.

    Google Scholar 

  6. Shklowski, B.I. and Efros, A.L., Elektronniye svoistva legirovannykh poluprovodnikov (Electronic Properties of Doped Semiconductors), Moscow: Nauka, 1979.

    Google Scholar 

  7. Hopping Transport in Solids, Poolak, M. and Shklowski, B., Eds., Amsterdam: Elsevier, 1990.

    Google Scholar 

  8. Dragunov, V.P. et al., Osnovy nanoelektroniki (Principles of Nanoelectronics), Moscow: Logos, 2006.

    Google Scholar 

  9. Keldysh, L.V., Phys. Stat. Sol. (a), 1997, vol. 164, p. 3.

    Article  ADS  Google Scholar 

  10. Haroutunian, S.L., Haroutunian, V.A., et al., Thin Solid Films, 1995, vol. 258, p. 347.

    Article  ADS  Google Scholar 

  11. Guozhong, C., Nanostructures and Nanomaterials, Synthesis, Properties and Applications, London: Imperial College press, 2005.

    Google Scholar 

  12. Landau, L.D. and Lifshitz, E.M., Kvantovaya mekhanika (Quantum Mechanics), Moscow: Nauka, 1974.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. State Engineering University of Armenia, Gyumri branch, Gyumri, Armenia

    S. L. Harutyunyan

Authors
  1. S. L. Harutyunyan
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Original Russian Text © S.L. Harutyunyan, 2009, published in Izvestiya NAN Armenii, Fizika, 2009, Vol. 44, No. 3, pp. 213–219.

About this article

Cite this article

Harutyunyan, S.L. Features of hopping conductivity in weakly doped and weakly compensated semiconductor quantum wells. J. Contemp. Phys. 44, 145–149 (2009). https://doi.org/10.3103/S1068337209030098

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3103/S1068337209030098

PACS numbers

Key words

Search

Navigation