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Influence of gamma radiation on spectral photosensitivity of (Si2)1 − x (ZnSe) x solid solution

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Abstract

Increase of the photosensitivity of the pSi-n(Si2)1 − x (ZnSe) x (0 ≤ x ≤ 0.01) structure exposed to gamma radiation with photon energy E ph ≥ 2.3 eV has been demonstrated. It is shown that irradiation with dose up to 104 rad raises and radiation with dose up to 105 rad reduces the forward current of the pSi-n(Si2)1 − x (ZnSe) x structure.

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Authors and Affiliations

  1. Physicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Bukhara, Uzbekistan

    Sh. N. Usmonov, A. S. Saidov, M. S. Saidov & K. A. Amonov

Authors
  1. Sh. N. Usmonov
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  2. A. S. Saidov
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  3. M. S. Saidov
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  4. K. A. Amonov
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Additional information

Original Russian Text © Sh.N. Usmonov, A.S. Saidov, M.S. Saidov, K.A. Amonov, 2009, published in Geliotekhnika, 2009, No. 1, pp. 13–15.

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Usmonov, S.N., Saidov, A.S., Saidov, M.S. et al. Influence of gamma radiation on spectral photosensitivity of (Si2)1 − x (ZnSe) x solid solution. Appl. Sol. Energy 45, 7–8 (2009). https://doi.org/10.3103/S0003701X09010022

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  • DOI: https://doi.org/10.3103/S0003701X09010022

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