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Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

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Abstract

Epitaxial layers of the solid solutions (Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of n-type conductivity on pSi base were cultivated by liquid phase epitaxy from a restricted amount of tin solution–melt. The spectral photosensitivity dependence of the pSi–n(Si2)1–x (ZnSe) x structure was studied. A peak was discovered in the response level within the interval of photon energy from 2.67 to 3 eV conditioned by the energy band of ZnSe “quantum dots,” which is located ~1.55 eV lower than the ceiling of the silicon valence band.

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Authors and Affiliations

  1. Physics and Technology Institute, Academy of Science, Tashkent, Republic of Uzbekistan

    A. S. Saidov & K. A. Amonov

  2. Ion-Plasma and Laser Technology Institute, Academy of Science, Tashkent, Republic of Uzbekistan

    B. R. Kutlimurotov

Authors
  1. A. S. Saidov
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  2. K. A. Amonov
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  3. B. R. Kutlimurotov
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Correspondence to A. S. Saidov.

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Original Russian Text © A.S. Saidov, K.A. Amonov, B.R. Kutlimurotov, 2016, published in Geliotekhnika, 2016, No. 1, pp. 3–7.

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Saidov, A.S., Amonov, K.A. & Kutlimurotov, B.R. Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells. Appl. Sol. Energy 52, 1–4 (2016). https://doi.org/10.3103/S0003701X16010102

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  • DOI: https://doi.org/10.3103/S0003701X16010102

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