Abstract
A sparse ZnO nanowire array with aspect ratio of ca. 120 and growth rate of 1 μm/h was synthesized by controlling the density of seeds at the initial stage of nanowire growth. The spatially-separated nanowires were cut off from the growth substrate without breaking, and thus were useful in the construction of a single-nanowire device by photolithography. The device exhibited a linear current–voltage characteristic associated with ohmic contact between ZnO nanowire and electrodes. The device further demonstrated a reliable photoresponse with an IUV/Idark of ~100 to ultraviolet light irradiation.
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Acknowledgments
This research was supported by PRESTO (JPMJPR151B, JPMJPR19H9), Japan Science and Technology Agency (JST), the JSPS Grant-in-Aid for Young Scientists (A) 17H04803, the JSPS Grant-in-Aid for Scientific Research (A) 16H02091, the JSPS Grant-in-Aid for Scientific Research (S) 18H05243, a research grant from the Murata Science Foundation, Advanced Technology Institute Research Grants 2019, Foundation of Public Interest of Tatematsu, the Nitto Foundation, and the Nanotechnology Platform Program (Molecule and Material Synthesis) of the Ministry of Education, Culture, Sports, Science and Technology (MEXT).
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Liu, Q., Yasui, T., Nagashima, K. et al. Photolithographically Constructed Single ZnO Nanowire Device and Its Ultraviolet Photoresponse. ANAL. SCI. 36, 1125–1129 (2020). https://doi.org/10.2116/analsci.20N002
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DOI: https://doi.org/10.2116/analsci.20N002