Abstract
To enhance the excellent light management capability, the GaN nanowire array (NWA) resonator is designed. When the diameter D = 120 nm, the height H = 750 nm, and the period P = 240 nm, the maximum resonance-enhanced optical absorption can be obtained at a resonance wavelength of 341 nm, the value is about 98%. The carrier concentration is mainly concentrated inside the nanowire, and the light reflection at the resonance wavelength is reduced to about 3%. These factors comprehensively enhance the quantum efficiency (QE). The QE of the GaN NWA cathode is 2.7 times as long as that of the GaN planar cathode.
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Acknowledgments
This work is sponsored by National Natural Science Foundation of China (Grant No. 62275124), Natural Science Foundation of Jiangsu Province-China (Grant No. BK20211193), and LLL Night Vision Technology Key Laboratory Fund-China (Grant No. J20210103).
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Liu, L., Lu, F., Tian, J. et al. Absorption and photoemission of optically localized GaN nanowire array cathode. MRS Communications 13, 162–168 (2023). https://doi.org/10.1557/s43579-023-00328-3
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DOI: https://doi.org/10.1557/s43579-023-00328-3