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Atomic-Level Control during Film Growth under Highly Kinetically Constrained Conditions: H Mediation and Ultrahigh Doping during Si1–X Gex Gas-Source Epitaxy

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Abstract

The following article is an edited transcript of the presentation given by Joseph E. reene (University of Illinois), recipient of the MRS David Turnbull Lecturer Award at the 1999 MRS Fall Meeting in Boston on December 2,1999. Greene was cited for “contributions to the use of nonthermal methods in the growth of thin films and the engineering of their phase, composition, and microstructure; and for excellence in teaching and writing.”

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  1. J. E. Greene
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Greene, J.E. Atomic-Level Control during Film Growth under Highly Kinetically Constrained Conditions: H Mediation and Ultrahigh Doping during Si1–X Gex Gas-Source Epitaxy. MRS Bulletin 26, 777–789 (2001). https://doi.org/10.1557/mrs2001.205

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