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SrRuO3 thin films grown on MgO substrates at different oxygen partial pressures

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Abstract

A comprehensive study of SrRuO3 thin films growth on (001) MgO substrates by pulsed laser deposition in a wide oxygen pressure range from 10 to 300 mTorr was carried out. The experimental results showed a correlation between the lattice constants, resistivity, and oxygen partial pressures used. Ru deficiency detected only in films deposited at lower oxygen pressures (<50 mTorr), resulted in an elongation of the in-plane and out-of-plane lattice constants and an increase in the film resistivity. When deposited with oxygen partial pressure of 50 mTorr, SrRuO3 films had lattice parameters matching those of bulk SrRuO3 material and exhibited room temperature resistivity of 320 μΩ·cm. The resistivity of SrRuO3/MgO films decreased with increasing oxygen partial pressure.

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ACKNOWLEDGMENTS

We acknowledge the financial support from the Engineering and Physical Sciences Research Council and the King Abdullah University of Science and Technology.

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Authors and Affiliations

  1. Department of Materials, Imperial College London, Exhibition Road, London, SW7 2AZ, United Kingdom

    Bin Zou, Peter K. Petrov & Neil McN. Alford

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  1. Bin Zou
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  2. Peter K. Petrov
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  3. Neil McN. Alford
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Correspondence to Bin Zou.

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Zou, B., Petrov, P.K. & Alford, N.M. SrRuO3 thin films grown on MgO substrates at different oxygen partial pressures. Journal of Materials Research 28, 702–707 (2013). https://doi.org/10.1557/jmr.2012.409

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  • DOI: https://doi.org/10.1557/jmr.2012.409

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