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Influence of sintering temperature and pressure on crystallite size and lattice defect structure in nanocrystalline SiC

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Abstract

Microstructure of sintered nanocrystalline SiC is studied by x-ray line profile analysis and transmission electron microscopy. The lattice defect structure and the crystallite size are determined as a function of pressure between 2 and 5.5 GPa for different sintering temperatures in the range from 1400 to 1800 °C. At a constant sintering temperature, the increase of pressure promotes crystallite growth. At 1800 °C when the pressure reaches 8 GPa, the increase of the crystallite size is impeded. The grain growth during sintering is accompanied by a decrease in the population of planar faults and an increase in the density of dislocations. A critical crystallite size above which dislocations are more abundant than planar defects is suggested.

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Authors and Affiliations

  1. Department of Materials Physics, Eötvös Loránd University, H-1518, Budapest, Hungary

    J. Gubicza, L. Balogh, J. Labar & T. Ungár

  2. Department of Physics and Astronomy, Texas Christian University, Fort Worth, TX, 76129, USA

    S. Nauyoks & T. W. Zerda

  3. Research Institute for Technical Physics and Materials Science, H-1525, Budapest, Hungary

    J. Labar

Authors
  1. J. Gubicza
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  2. S. Nauyoks
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  3. L. Balogh
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  4. J. Labar
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  5. T. W. Zerda
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  6. T. Ungár
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Correspondence to T. W. Zerda.

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Gubicza, J., Nauyoks, S., Balogh, L. et al. Influence of sintering temperature and pressure on crystallite size and lattice defect structure in nanocrystalline SiC. Journal of Materials Research 22, 1314–1321 (2007). https://doi.org/10.1557/jmr.2007.0162

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  • DOI: https://doi.org/10.1557/jmr.2007.0162

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