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Defect Engineering

  • Point Defects Part II
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Conclusions

The passage of “materials time” has been marked by increasing complexity in product fabrication and greater sophistication in product performance. The responsibility of defect engineers is to “make anything possible” by finding the correct process path. They innovatively apply the existing knowledge base and creatively expand it in frontier applications. The history of success provides a growing challenge with abundant opportunities.

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References

  1. W. Shockley and A. Goetzberger, J. Appl. Phys. 31 (1960) p. 1821.

    Article  Google Scholar 

  2. A.J.R. DeKock, Philips Res. Rep. Suppl. 1 (1973); J. Appl. Phys. 44 (1973) p. 2816.

    Article  CAS  Google Scholar 

  3. K.E. Benson, W. Lin, and E.P. Martin, in Semiconductor Silicon 1981, edited by H.R. Huff, R.J. Kriegler, and Y. Takeishi (Electrochemical Society, Pennington, New Jersey, 1981) p. 33.

    Google Scholar 

  4. J.R. Patel, in Semiconductor Silicon 1977, edited by H.R. Huff and E. Sirtl, (Electrochemical Society, Pennington, New Jersey, 1977) p. 189.

    Google Scholar 

  5. D.M. Maher, A.M. Staudinger and J.R. Patel, J. Appl. Phys. 47 (1976) p. 3813.

    Article  CAS  Google Scholar 

  6. S.M. Hu, J. Appl. Phys. 45 (1974) p. 1567.

    Article  CAS  Google Scholar 

  7. C.J. Varker and K.V. Ravi, J. Appl. Phys. 45 (1974) p. 272.

    Article  CAS  Google Scholar 

  8. T.Y. Tan, E.E. Gardiner, and W.K. Tice, Appl. Phys. Lett. 30 (1977) p. 175.

    Article  CAS  Google Scholar 

  9. R.A. Craven, in Impurity Diffusion and Geltering in Silicon, edited by R.B. Fair, C.W. Pearce, and J. Washburn (Mater. Res. Soc. Symp. Proc. 36, Pittsburgh, PA, 1985) p. 159.

  10. G.M. Martin, A. Mitonneau, and A. Mircea, Electron. Lett. 13 (1977) p. 191.

    Article  CAS  Google Scholar 

  11. D.E. Holmes, R.T. Chen, K.R. Elliott, and C.G. Kirkpatrick, Appl. Phys. Lett. 40 (1982) p. 46.

    Article  CAS  Google Scholar 

  12. L.B. Ta, H.M. Hobgood, A. Rohatgi, and R.N. Thomas, J. Appl. Phys. 53 (1982), p. 5771.

    Article  CAS  Google Scholar 

  13. J.M. Parsey Jr., Y. Nanishi, J. Lagowski, and H.C. Gatos, J. Electrochem. Soc. 128 (1981) p. 936; 129 (1985) p. 388.

    Article  CAS  Google Scholar 

  14. J. Lagowski and H.C. Gatos, J. Electron. Mater. 14a (1985) p. 73.

    Google Scholar 

  15. L.C. Kimerling, Rev. Solid State Science 4 (1990) p. 335.

    CAS  Google Scholar 

  16. R. People and J.C. Bean, Appl. Phys Lett. 47 (1985) p. 322.

    Article  CAS  Google Scholar 

  17. J.W. Matthews, A.E. Blakeslee, and S. Mader, Thin Solid Films 33 (1976) p. 253.

    Article  CAS  Google Scholar 

  18. G.H. Gilmer and M.H. Grabow, J. Metals 39 (1987) p. 19.

    CAS  Google Scholar 

  19. E.A. Fitzgerald, G.P. Watson, R.E. Proano, D.G. Act, P.D. Kirchner, G.D. Pettit, and J.M. Woodall, J. Appl. Phys. 65 (1989) p. 2220.

    Article  CAS  Google Scholar 

  20. Y.J. Mii, Y.H. Xie, and E.A. Fitzgerald, Appl. Phys. Lett. 59 (1991); E.A. Fitzgerald, Materials Science Reports (1991), to be published.

  21. D. Fahey, R.B. Griffin, and J.D. Plummer, Rev. Mod. Phys. 61 (1989) p. 289.

    Article  CAS  Google Scholar 

  22. C.M. Osburn, J. Electron. Mater. 19 (1990) p. 67.

    Article  CAS  Google Scholar 

  23. J.L. Benton, J. Michel, L.C. Kimerling, B.E. Weir, and R.A. Gottscho, J. Electron. Mater. 20 (1991) p. 643.

    Article  CAS  Google Scholar 

  24. L.C. Kimerling, M.T. Asom, J.L. Benton, P.J. Drevinsky, and C.E. Caifer, Mater. Science Forum 38 (1989) p. 141.

    Google Scholar 

  25. R. Beyers, J. Appl. Phys. 56 (1984) p. 147.

    Article  CAS  Google Scholar 

  26. R. Beyers, K.B. Kim, and R. Sinclair, J. Appl. Phys. 61 (1987) p. 2195.

    Article  CAS  Google Scholar 

  27. W.C. Ballamy and L.C. Kimerling, IEEE Trans. Electron Devices ED-25 (1978) p. 746.

    Article  CAS  Google Scholar 

  28. G.A. Rozgonyi and R.R. Kola, in Defect Control in Semiconductors, edited by K. Sumino (North Holland, New York, 1990) p. 579.

    Google Scholar 

  29. R.A. Street, Rev. Solid State Science 4 (1990) p. 619.

    CAS  Google Scholar 

  30. C.H. Seager and D.S. Ginley, Appl. Phys Lett. 34 (1979) p. 337.

    Article  CAS  Google Scholar 

  31. R.C. Newman, A.R. Brown, R. Murray, A. Tipping, and J.H. Tucker, in Semiconductor Silicon 1990, edited by H.R. Huff, K.G. Barndough, and J. Chikawa (Electrochemical Society, Pennington, New Jersey, 1990) p. 734.

    Google Scholar 

  32. F.M. d’Heurle, Met. Trans. 2 (1971) p. 683.

    Article  Google Scholar 

  33. S. Vaidya, T.T. Sheng, and A.K. Sinha, Appl. Phys. Lett. 36 (1980) p. 464.

    Article  CAS  Google Scholar 

  34. J. Cho and C.V. Thompson, Appl. Phys Lett. 54 (1989) p. 2577.

    Article  CAS  Google Scholar 

  35. C.H. Henry, G.E. Blonder, and R.F. Kazarinov, IEEE J. Lightwave Techn. 1 (1989) p. 1530.

    Article  Google Scholar 

  36. J. Michel, J.L. Benton, R.F. Ferrante, D.C. Jacobson, J.M. Poate, and L.C. Kimerling, J. Appl. Phys. 70 (1991).

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Kimerling, L.C. Defect Engineering. MRS Bulletin 16, 42–47 (1991). https://doi.org/10.1557/S0883769400055342

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