Conclusions
The passage of “materials time” has been marked by increasing complexity in product fabrication and greater sophistication in product performance. The responsibility of defect engineers is to “make anything possible” by finding the correct process path. They innovatively apply the existing knowledge base and creatively expand it in frontier applications. The history of success provides a growing challenge with abundant opportunities.
Similar content being viewed by others
References
W. Shockley and A. Goetzberger, J. Appl. Phys. 31 (1960) p. 1821.
A.J.R. DeKock, Philips Res. Rep. Suppl. 1 (1973); J. Appl. Phys. 44 (1973) p. 2816.
K.E. Benson, W. Lin, and E.P. Martin, in Semiconductor Silicon 1981, edited by H.R. Huff, R.J. Kriegler, and Y. Takeishi (Electrochemical Society, Pennington, New Jersey, 1981) p. 33.
J.R. Patel, in Semiconductor Silicon 1977, edited by H.R. Huff and E. Sirtl, (Electrochemical Society, Pennington, New Jersey, 1977) p. 189.
D.M. Maher, A.M. Staudinger and J.R. Patel, J. Appl. Phys. 47 (1976) p. 3813.
S.M. Hu, J. Appl. Phys. 45 (1974) p. 1567.
C.J. Varker and K.V. Ravi, J. Appl. Phys. 45 (1974) p. 272.
T.Y. Tan, E.E. Gardiner, and W.K. Tice, Appl. Phys. Lett. 30 (1977) p. 175.
R.A. Craven, in Impurity Diffusion and Geltering in Silicon, edited by R.B. Fair, C.W. Pearce, and J. Washburn (Mater. Res. Soc. Symp. Proc. 36, Pittsburgh, PA, 1985) p. 159.
G.M. Martin, A. Mitonneau, and A. Mircea, Electron. Lett. 13 (1977) p. 191.
D.E. Holmes, R.T. Chen, K.R. Elliott, and C.G. Kirkpatrick, Appl. Phys. Lett. 40 (1982) p. 46.
L.B. Ta, H.M. Hobgood, A. Rohatgi, and R.N. Thomas, J. Appl. Phys. 53 (1982), p. 5771.
J.M. Parsey Jr., Y. Nanishi, J. Lagowski, and H.C. Gatos, J. Electrochem. Soc. 128 (1981) p. 936; 129 (1985) p. 388.
J. Lagowski and H.C. Gatos, J. Electron. Mater. 14a (1985) p. 73.
L.C. Kimerling, Rev. Solid State Science 4 (1990) p. 335.
R. People and J.C. Bean, Appl. Phys Lett. 47 (1985) p. 322.
J.W. Matthews, A.E. Blakeslee, and S. Mader, Thin Solid Films 33 (1976) p. 253.
G.H. Gilmer and M.H. Grabow, J. Metals 39 (1987) p. 19.
E.A. Fitzgerald, G.P. Watson, R.E. Proano, D.G. Act, P.D. Kirchner, G.D. Pettit, and J.M. Woodall, J. Appl. Phys. 65 (1989) p. 2220.
Y.J. Mii, Y.H. Xie, and E.A. Fitzgerald, Appl. Phys. Lett. 59 (1991); E.A. Fitzgerald, Materials Science Reports (1991), to be published.
D. Fahey, R.B. Griffin, and J.D. Plummer, Rev. Mod. Phys. 61 (1989) p. 289.
C.M. Osburn, J. Electron. Mater. 19 (1990) p. 67.
J.L. Benton, J. Michel, L.C. Kimerling, B.E. Weir, and R.A. Gottscho, J. Electron. Mater. 20 (1991) p. 643.
L.C. Kimerling, M.T. Asom, J.L. Benton, P.J. Drevinsky, and C.E. Caifer, Mater. Science Forum 38 (1989) p. 141.
R. Beyers, J. Appl. Phys. 56 (1984) p. 147.
R. Beyers, K.B. Kim, and R. Sinclair, J. Appl. Phys. 61 (1987) p. 2195.
W.C. Ballamy and L.C. Kimerling, IEEE Trans. Electron Devices ED-25 (1978) p. 746.
G.A. Rozgonyi and R.R. Kola, in Defect Control in Semiconductors, edited by K. Sumino (North Holland, New York, 1990) p. 579.
R.A. Street, Rev. Solid State Science 4 (1990) p. 619.
C.H. Seager and D.S. Ginley, Appl. Phys Lett. 34 (1979) p. 337.
R.C. Newman, A.R. Brown, R. Murray, A. Tipping, and J.H. Tucker, in Semiconductor Silicon 1990, edited by H.R. Huff, K.G. Barndough, and J. Chikawa (Electrochemical Society, Pennington, New Jersey, 1990) p. 734.
F.M. d’Heurle, Met. Trans. 2 (1971) p. 683.
S. Vaidya, T.T. Sheng, and A.K. Sinha, Appl. Phys. Lett. 36 (1980) p. 464.
J. Cho and C.V. Thompson, Appl. Phys Lett. 54 (1989) p. 2577.
C.H. Henry, G.E. Blonder, and R.F. Kazarinov, IEEE J. Lightwave Techn. 1 (1989) p. 1530.
J. Michel, J.L. Benton, R.F. Ferrante, D.C. Jacobson, J.M. Poate, and L.C. Kimerling, J. Appl. Phys. 70 (1991).
Rights and permissions
About this article
Cite this article
Kimerling, L.C. Defect Engineering. MRS Bulletin 16, 42–47 (1991). https://doi.org/10.1557/S0883769400055342
Published:
Issue Date:
DOI: https://doi.org/10.1557/S0883769400055342