Abstract
The electron field emission properties of sulfur-assisted nanocrystalline carbon (n-C: S) thin films grown on molybdenum substrates by hot-filament CVD technique using methane-hydrogen (CH4/H2) and hydrogen sulfide-hydrogen (H2S/H2) gas mixtures were investigated. The field emission properties of the S-assisted films are reported as a function of sulfur concentration. The incorporation of S caused structural and microstructural changes that were characterized with SEM, AFM and Raman spectroscopy (RS). The S-assisted films show smoother surfaces and smaller grains than those grown without. The lowest turn-on field measured was around 4.5 - 5.0 V/μm films grown with 500 ppm of hydrogen sulfide and at 900 °C. The electron field emission properties of S-assisted films were also compared to those grown without sulfur (i.e., intrinsic). An inverse correlation between the threshold field (Ec) and sulfur concentration was found. These finding are attributed to defect induced states within the electronic band structure.
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References
C. A. Spindt, I. Brodie, L. Humphrey and E. R. Westerberg, J. Appl. Phys. 47, 5248 (1976).
J. A. Castellano, in Handbook of Display Technology (Academic Press, New York, 1992).
J. E. Jaskie, Mater. Res. Bull. 21, 59 (1996).
J. Robertson, Mater. Res. Soc. Symp. Proc. 509, 83 (1998) and references therein.
A. Hart, B. S. Satyanarayana, W. I. Milne and J. Robertson, Diamond and Related Materials 8, 809 (1999).
A. V. Karabutov, V. I. Konov, S. M. Pimenov, E. D. Obraztsova, V. D. Frolov, V. G. Pereverzev and A. A. Smolin, J. Wide Bandgap Materials 7, 68 (1999).
F. J. Himpsel, J. A. Knapp, J. A. Van Vechten and D. E. Eastman, Phys. Rev. B 20, 624–627 (1979)
J. Y. Shin, H. K. Baik and K. M. Song, J. Appl. Phys. 87, 7508 (2000).
G. A. J. Amartunga, S. R. P. Silva, Appl. Phys. Lett. 68, 2529 (1996)
K. Okano, S. Koizumi, S. R. P. Silva, and G. A. J. Amartunga, Nature, 381, 140 (1996).
C. Wang, A. Garcia, D. C. Ingran, M. Lake and M. E. Kordesch, Electronics Lett. 27, 1459 (1991).
A. A. Tallin, L. S. Pan, K. F. McCarty, T. E. Felter, H. J. Doerr, R. F. Bunshah, Appl. Phys. Lett. 69, 3842 (1996).
B. F. Coll, J. E. Jaskie, J. L. Markahm, E. P. Menu, A. A. Talin, P. VonAllmen, Mater. Res. Soc. Symp. Proc. 498, xx (1998).
J. Shiao, C. A. Zorman and R. W. Hoffman, Mater. Res. Soc. Symp. Proc. 349, 465 (1994).
R. Kalish, A. Reznik, C. Uzan-Saguy and C. Cytermann, Appl. Phys. Lett. 76, 757 (2000) and references therein.
D. S. Dandy, Thin Solid Films 381, 1 (2001).
M. N. Gamo, C. Xiao, Y. Zhang, E. Yasu, Y. Kikucji, I. Sakaguchi, T. Suzuki, Y. Sato and T. Ando, Thin Solid Films 382, 113 (2001).
S. Gupta, B. R. Weiner and G. Morell, Diamond and Related Materials 2001 (in Press)
O. Groning, O. M. Kuttel, P. Groning, and L. Schlapbach, J. Vac. Sci. Technol. B 17, 1970 (1999) and references therein.
B. L. Weiss, A. Badzian, L. Pilione, T. Badzian and W. Drawl, J. Vac. Sci. Technol. B 16, 681 (1998).
R. J. Nemanich, J. T. Glass, G. Luckovsky, and R. E. Sroder, J. Vac. Sci. Technol. A 6, 1783 (1988).
A. C. Ferrari and J. Robertson, Phys. Rev. B 61, 14095 (2000).
S. Bhattacharyya, K. Walzer, H. Hietschold and F. Richter, J. Appl. Phys. 89, 1619 (2001).
J. Shiao, C. A. Zorman and R. W. Hoffman, Mater. Res. Soc. Symp. Proc. 349, 465 (1994).
R. Haubner, S. Bohr and B. Lux, Diamond and Related Materials 8, 171 (2000).
I. H. Shin and T. D. Lee, J. Vac. Sci. Technol. B 18, 1027 (2000).
W. Zhu, G. P. Kochanski and S. Jin, Mater. Res. Soc. Symp. Proc. 509, 53–58 (1998)
N. S. Xu, J. Chen and S. Z. Deng, Appl. Phys. Lett. 76, 2463 (2000).
G. Pananakis, G. Ghibando, R. Kies and C. Papadas, J. Appl. Phys. 78, 2635 (1995).
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Gupta, S., Weiner, B.R., Weiss, B.L. et al. Effects of Sulfur Concentration on the Electron Field Emission Properties of Nanocrystalline Carbon Thin Films. MRS Online Proceedings Library 675, 691 (2001). https://doi.org/10.1557/PROC-675-W6.9.1
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DOI: https://doi.org/10.1557/PROC-675-W6.9.1