Abstract
A method of synthesizing carbon films on single-crystal silicon substrates by methane pyrolysis in an electrical field is suggested. The pressure and temperature arising in a working chamber when the substrate is exposed to C–4 ions during pyrolysis are measured. Ion bombardment generates nuclei in the form of fibers about 2 μm in diameter providing the growth of a polycrystalline film. The resulting material is examined using electron microscopy and photo- and cathodoluminescence. Synthesized films are a composite material the matrix of which contains nanoclusters of a dissimilar crystalline nature. The effect of considerable two-stage decrease in the resistivity of the film material with increasing temperature from 300 to 1750 K is discovered. This points to the semiconducting properties of thick carbon films.
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Original Russian Text © S.K. Brantov, A.N. Tereshchenko, E.A. Shteinman, E.B. Yakimov, 2016, published in Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 86, No. 3, pp. 110–113.
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Brantov, S.K., Tereshchenko, A.N., Shteinman, E.A. et al. Physical properties of carbon films obtained by methane pyrolysis in an electric field. Tech. Phys. 61, 428–431 (2016). https://doi.org/10.1134/S1063784216030051
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DOI: https://doi.org/10.1134/S1063784216030051