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Effect of Film Composition on Low Temperature Processing of SBT Deposited by MOCVD

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Abstract

Bi-layered ferroelectric strontium bismuth tantalate (SBT) thin films of various film compositions were deposited on Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) and crystallized at 700°C in oxygen ambient. Phase transition, orientation, second phases and remanent polarization were investigated with respect to film stoichiometry. X-ray diffraction (XRD) measurements revealed that excess Bi lowers the transition temperature from fluorite-type to ferroelectric phase. However, SBT films with Bi-excess of 15% or higher exhibit pronounced Bi-loss during crystallization and a decrease in the relative intensity of the (200) peak. Highly Sr-deficient films are not fully crystallized but support pyrochlore formation. The maximum remanent polarization is obtained at a Sr-deficiency of 15-25% and a Bi-excess of 10% (0.85/2.20/2.00).

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Author notes

  1. Harald Bachhofer

    Present address: Memory Products, Infineon Technologies AG, Otto-Hahn-Ring 6, 81730, Munich, Germany

Authors and Affiliations

  1. Memory Products, Infineon Technologies AG, Otto-Hahn-Ring 6, 81730, Munich, Germany

    Frank Hintermaier, Manfred Hauf, Oswald Spindler & Christine Dehm

  2. University of Regensburg, Physics Department, 93040, Regensburg, Germany

    Harald Bachhofer, Thomas Haneder, Christine Dehm & Henning von Philipsborn

  3. IFF, Forschungszentrum Juelich and RWTH Aachen, 52070, Aachen, Germany

    Rainer Waser

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  1. Harald Bachhofer
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  2. Frank Hintermaier
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  4. Oswald Spindler
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  5. Thomas Haneder
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  6. Christine Dehm
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  7. Henning von Philipsborn
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  8. Rainer Waser
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Bachhofer, H., Hintermaier, F., Hauf, M. et al. Effect of Film Composition on Low Temperature Processing of SBT Deposited by MOCVD. MRS Online Proceedings Library 596, 149–154 (1999). https://doi.org/10.1557/PROC-596-149

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  • DOI: https://doi.org/10.1557/PROC-596-149

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