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On the Luminescence of VLS-grown GaAs-AlGaAs Core-Shell Nanowires and its Dependence on MOVPE Growth Conditions

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Abstract

We report on the photoluminescence (PL) of GaAs-Al0.32Ga0.68As core-shell nanowires grown by MOVPE, and their dependence on the precursors V:III molar ratio utilised in the vapor during growth. It is shown that the PL emission of the GaAs nanowire core red-shifts with decreasing the V:III ratio from 30:1 to 4:1, an effect tentatively ascribed to the build-up of a space-charge region at the core-shell hetero-interface, the latter associated to the unintentional incorporation of impurities, namely C in GaAs and Si in AlGaAs.

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Authors and Affiliations

  1. IMM-CNR, Lecce Research Unit, Lecce, Italy

    P. Prete

  2. Dept. of Innovation Engineering, University of Salento, Lecce, Italy

    N. Lovergine, I. Miccoli, F. Marzo & J. A. Burger

  3. IMEM-CNR, Parma, Italy

    J. A. Burger, G. Salviati & L. Lazzarini

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  1. P. Prete
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  2. N. Lovergine
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  3. I. Miccoli
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  4. F. Marzo
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  5. J. A. Burger
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  6. G. Salviati
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  7. L. Lazzarini
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Prete, P., Lovergine, N., Miccoli, I. et al. On the Luminescence of VLS-grown GaAs-AlGaAs Core-Shell Nanowires and its Dependence on MOVPE Growth Conditions. MRS Online Proceedings Library 1206, 2 (2009). https://doi.org/10.1557/PROC-1206-M11-36

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  • DOI: https://doi.org/10.1557/PROC-1206-M11-36

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