Abstract
Zinc oxide (ZnO) films doped with aluminum (Al) were deposited with a pulsed laser deposition technique to characterize the charge compensation phenomena in ZnO. In particular, oxygen radical (O*) irradiation during film deposition was used to modify the oxygen stoichiometry. Irradiation with O* decreased electron concentration in Al-doped ZnO. The lattice parameter of the resultant films also varied with the growth conditions. However, no obvious correlation between electron concentration and lattice parameter was found. The self-diffusion coefficients indicated the presence of non-equilibrium defects. The properties of the films are discussed from the viewpoint of non-equilibrium compensated defects detected in the diffusion measurements.
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Ryoken, H., Sakaguchi, I., Ohashi, N. et al. Non-equilibrium defects in aluminum-doped zinc oxide thin films grown with a pulsed laser deposition method. Journal of Materials Research 20, 2866–2872 (2005). https://doi.org/10.1557/JMR.2005.0353
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DOI: https://doi.org/10.1557/JMR.2005.0353