Abstract
Nanophase precipitates of CdS formed in amorphous SiO2 by ion implantation and thermal processing have recently been found to exhibit a “hollow-particle” or “shell-like” microstructure. The present investigations show that this hollow-particle microstructure can be reproduced for a variety of materials other than CdS, and these results provide new insight into the mechanisms responsible for the formation of hollow precipitates embedded in solid hosts. Various elemental metal nanocrystals were formed in (100)-oriented crystalline Si hosts by ion implantation coupled with thermal treatments in which the annealing parameters were varied to investigate the “hollow-particle” formation conditions. The results indicate that depending on the melting points and vapor pressure of the precipitates or on the initial state of the host material, several processes acting either independently or in concert can lead to hollow precipitate formation. First, the implantation of materials having a high vapor pressure, either at the implant temperature or when heated during annealing, can lead to the formation of cavities in the crystalline host. Hollow precipitates can then form by a partial filling and coating of the cavity walls by the implanted species in a diffusion-based gettering/ripening process. Internal void formation can also occur or be enhanced by volume contraction during cooling if the particle solidifies from a liquid phase.
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A. Meldrum, R.F. Haglund Jr., L.A. Boatner, and C.W. White. Adv. Mater. (in press).
Proceedings of the XXth International conference on Ion Beam Modification of Materials, edited by A. Polman, Nucl. Instrum. Methods Phys. Rev. B 148 (Elsevier, Amsterdam, The Netherlands, 1999).
A. Meldrum, L.A. Boatner, C.W. White, and R.C. Ewing, Mater. Res. Innovations 3, 204 (2000).
L. Brus, in World Technology Evaluation Center Workshop Report on R&D Status and Trends in Nanoparticles, Nanostructured Materials, and Nanodevices in the United States, Proceedings of the May 8-9, 1997, Workshop.
R. Siegel, Phys. Today Oct., 64 (1993).
A.P. Alivisatos, Science 271, 933 (1996).
A. Meldrum, C.W. White, L.A. Boatner, I.M. Anderson, R.A. Zuhr, E. Sonder, and J.D. Budai, and D.O. Henderson, Nucl. Instrum. Methods Phys. Res. B149, 957 (1999).
J.D. Budai, C.W. White, S.P. Withrow, M.F. Chisholm, J.G. Zhu, and R.A. Zuhr, Nature 390, 384 (1997).
A. Meldrum, R.A. Zuhr, E. Sonder, J.D. Budai, C.W. White, L.A. Boatner, D.O. Henderson, and R.C. Ewing, Appl. Phys. Lett. 74, 699 (1999).
A. Meldrum, E. Sonder, R.A. Zuhr, I.M. Anderson, J.D. Budai, C.W. White, L.A. Boatner, and D.O. Henderson, J. Mater. Res. 14, 4502 (1999).
J.P. McCaffrey, B.T. Sullivan, J.W. Fraser, and D.L. Callahan, Micron 27, 407 (1996).
B. Wunderlich, J. Cryst. Growth 48, 227 (1980).
N.D. Theodore, T.L. Alford, C.B. Carter, J.W. Mayer, and N.W. Cheung, Appl. Phys. A 54, 124 (1992).
A.N. Nesmeyanov, Vapor Pressure of the Chemical Elements (Elsevier, Amsterdam, The Netherlands, 1963).
J. Wong-Leung, J.S. Williams, R.G. Elliman, E. Nygren, D.J. Eaglesham, D.C. Jacobson, and J.M. Poate, Nucl. Instrum. Methods Phys. Res. B96, 253 (1995).
D.M. Follstaedt, S.M. Myers, G.A. Petersen, and J.W. Medernach, J. Electron. Mater. 25, 151 (1996).
V. Raineri, P.G. Fallica, G. Percolla, A. Battaglia, M. Barbagallo, and S.U. Campisano, J. Appl. Phys. 78, 3727 (1995).
E. Antoncik, Appl. Phys. A 56, 291 (1993).
A. Herrera Gomez, P.M. Rousseau, G. Materlik, T. Kendelewicz, J.C. Woicik, P.B. Griffin, J. Plummer, and W.E. Spicer, Appl. Phys. Lett. 68, 3090 (1996).
J. Wong-Leung, E. Nygren, and J.S. Williams, Appl. Phys. Lett. 67, 416 (1995).
L.Z. Mezey and J. Giber, Jpn. J. Appl. Phys. 21, 1569 (1982).
H.W. Sheng, K. Lu, and E. Ma, Acta Mater. 46, 5195 (1998).
H.W. Sheng, J. Xu, L.G. Yu, X.K. Sun, Z.Q. Hu, and K. Lu, J. Mater. Res. 11, 2841 (1996).
H.W. Sheng, G. Ren, M. Peng, Z.Q. Hu, and K. Lu, Philos. Mag. Lett. 73, 179 (1996).
S.J. Zinkle and E.H. Lee, Met. Trans. 21A, 1037 (1990).
N. Ishikawa, M. Awaji, K. Furuya, R.C. Birtcher, and C.W. Allen, Nucl. Instrum. Methods B 127/128, 123 (1997).
D.M. Follstaedt, Appl. Phys. Lett. 62, 1116 (1993).
S.M. Myers and D.M. Follstaedt, J. Appl. Phys. 79, 1337 (1996).
J. Wong-Leung, C.E. Ascheron, M. Petravic, R.G. Elliman, and J.S. Williams, Appl. Phys. Lett. 66, 1231 (1995).
A. Meldrum, S.J. Zinkle, L.A. Boatner, and R.C. Ewing, Nature 395, 56 (1998).
W.R. Wampler, S.M. Myers, and D.M. Follstaedt, Phys. Rev. B 48, 4492 (1993).
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Meldrum, A., Honda, S., White, C.W. et al. Nanocrystals in crystalline silicon: Void formation and hollow particles. Journal of Materials Research 16, 2670–2679 (2001). https://doi.org/10.1557/JMR.2001.0366
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DOI: https://doi.org/10.1557/JMR.2001.0366