Skip to main content
SpringerLink
Log in

TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon

  • Solids And Materials
  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J.S. Williams, J.M. Poate: In Ion Implantation and Beam Processing, ed. by J.S. Williams, J.M. Poate (Academic, New York 1984) Chap. 1

    Google Scholar 

  2. K. Murase, H. Harada: Trans. Inst. Electron and Commun. Eng. Jpn. Sect. E E 62, 709 (1979)

    Google Scholar 

  3. T. Koji, W.F. Tseng, J.W. Mayer, T. Suganuma: Solid-state Electron. 22, 335 (1979)

    Google Scholar 

  4. K.D. Beyer, M.R. Popaniak, T.H. Yeh: IBM Tech. Discl. Bull. 20, 1003 (1977)

    Google Scholar 

  5. H.W. Lam. R.F. Pinizziotta, H.T. Yuan, D.W. Bellavance: Electron. Lett. 17, 356 (1981)

    Google Scholar 

  6. T.E. Seidel, R.S. Payne, R.A. Moline, W.R. Costello, J.C. Tsai, K.R. Gardner: IEEE Trans. ED-24, 717 (1976)

    Google Scholar 

  7. K.D. Beyer, Y.H. Yek: J. Electrochem. Soc., Extended Abstracts 78-2, 552 (1978)

    Google Scholar 

  8. T. Hayashi, H. Okomoto, Y. Homma: Jpn. J. Appl. Phys. 19, 1005 (1980)

    Google Scholar 

  9. T. Tsujide, M. Nojira, H. Kitagawa: J. Appl. Phys. 15, 1605 (1980)

    Google Scholar 

  10. P. Glaser, P. Herman, V. Gy: Vacuum 27, 197 (1977)

    Google Scholar 

  11. A. Hiraki, M. Iwami, K. Shuto, T. Saegusa, K. Gamo, S. Namba: In Ion Implantation in Semiconductors, ed. by F. Chernow, J.A. Borders, D.K. Brice (Plenum, New York 1976) p. 57

    Google Scholar 

  12. Y. Okuyama, T. Hashmoto, T. Koguchi: J. Electrochem. Soc. 125, 1293 (1978)

    Google Scholar 

  13. K. Moriwaka, N. Masuda, H. Aritome, S. Namba: Jpn. J. Appl. Phys. 19, 491 (1980)

    Google Scholar 

  14. N.W. Cheung, C.L. Liang, B.K. Liew, R.H. Mutikainen, H. Wong: Nucl. Instrum. Meth. B 37/38, 941 (1989)

    Google Scholar 

  15. A.G. Lewis, R.A. Martin, T.-Y. Huang, J.Y. Chen, M. Koyanagi: IEEE Trans. ED-34, 2156 (1987)

    Google Scholar 

  16. J.M. Poate, F. Priolo, D.C. Jacobson, J.L. Batstone, M.O. Thompson: Nucl. Instrum. and Meth. B 37/38, 955 (1989)

    Google Scholar 

  17. S.-T. Lee, S.C. Chen, G. Rajeswaran, G. Braunstein: Appl. Phys. Lett. 54, 1145 (1989)

    Google Scholar 

  18. K.W. Terrill, P.F. Byrne, H.P. Zappe, N.W. Cheung, C. Hu: IEDM Tech. Dig., 406 (1984)

  19. H.-Y. Lin, C.H. Ting: Nucl. Instrum. Meth. B 37/38, 960 (1989)

    Google Scholar 

  20. A. Mogro-Campero, R.P. Love: J. Electrochem. Soc. 131, 655 (1984)

    Google Scholar 

  21. H. Wong, N.W. Cheung, P.K. Chu, J. Liu, J.W. Mayer: Appl. Phys. Lett. 52, 1023 (1988)

    Google Scholar 

  22. S.T. Picraux, F.L. Vook, H.J. Stein: In Proc. of Int'l. Conf. on Defects and Radiation in Semiconductors, ed. by J.H. Albany (Institute of Physics, Bristol 1979)

    Google Scholar 

  23. J.W. Corbett, J.K. Kavins, T.Y. Tan: Nucl. Instrum. Meth. 182/183, 457 (1981)

    Google Scholar 

  24. W.R. Brown: In Beam-Solid Interactions and Phase Transformation, ed. by H. Kurz, G.L. Oesan, J.M. Poate (Mat. Res. Soc., Pittsburgh 1985) p. 53

    Google Scholar 

  25. J.S. Williams: In Beam-Solid Interactions and Phase Transformations, ed. by H. Kurz, G.L. Oesan, J.M. Poate (Mat. Res. Soc., Pittsburgh 1985) p. 83

    Google Scholar 

  26. B.O. Hall: Nucl. Instrum. Meth. B 16, 177 (1986)

    Google Scholar 

  27. J.A. Brinkman: J. Appl. Phys. 25, 961 (1954)

    Google Scholar 

  28. O.W. Holland, D. Fathy, J. Narayan, O.S. Oen: Radiat. Eff. 90, 127 (1985)

    Google Scholar 

  29. E.H. Te Kaat, N. Hecking, J.K.N. Lindner: Mat. Sci. and Eng. B 2, 145 (1989)

    Google Scholar 

  30. O.W. Holland, M.K. El-Ghor, C.W. White: Appl. Phys. Lett. 53 (14), 1282 (1988)

    Google Scholar 

  31. O.W. Holland: Appl. Phys. Lett. 54, 320 (1989)

    Google Scholar 

  32. T.L. Alford, N.D. Theodore, J.C. Barbour, C.B. Carter, J.W. Mayer: Proc. XIIth Int. Cong. for EM, Seattle 4, p. 570–571 (1990)

    Google Scholar 

  33. N.D. Theodore, T.L. Alford, C.B. Carter, J.W. Mayer, N.W. Cheung: Submitted for publication (1991)

  34. T.L. Alford, N.D. Theodore, E.L. Gleischer, J.W. Mayer, C.B. Carter, B.M. Ullrich, N.W. Cheung, H. Wong: Appl. Phys. Lett. (1990) in press

  35. J.H. Freeman, D.J. Chivers, G.A. Gard, G.W. Hinder, B.J. Smith, J. Stephen: In Ion Implantation in Semiconductors, ed. by S. Namba (Plenum, New York 1975) p. 555

    Google Scholar 

  36. D.G. Beanland: In Ion Implantation and Beam Processing, ed. by J.S. Williams, J.M. Poate (Academic, New York 1984) p. 265

    Google Scholar 

  37. J.M. Poate, J.S. Williams: In Ion Implantation and Beam Processing, ed. by J.S. Williams, J.M. Poate (Academic, New York 1984) Chap. 2

    Google Scholar 

  38. T. Tsuchimoto, T. Tokuyama: Radiat. Eff. 6, 121 (1970)

    Google Scholar 

  39. J. Nakata, K. Kajiyama: Appl. Phys. Lett. 40, 686 (1982)

    Google Scholar 

  40. Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology, ed. by K.H. Hellwege, O. Madelung, New Series Vol. III, 17C (Springer, Berlin, Heidelberg 1984) p. 419

    Google Scholar 

  41. J.K.N. Lindner, N. Hecking, E. Te Kaat: Nucl. Instrum. Meth. B (in press) 42. J.M. Poate, J. Linros, F. Priolo, D.C. Jacobson, J.L. Batstone, M.O. Thompson: Phys. Rev. Lett. 60, 1322 (1988)

Download references

Author information

Author notes

  1. N. D. Theodore

    Present address: Advanced Technology Center, Motorola Inc., 85202, Mesa, AZ, USA

  2. T. L. Alford

    Present address: Texas Instruments, 75265, Dallas, TX, USA

  3. C. B. Carter

    Present address: Department of Chemical Engineering and Materials Science, Admundson Hall, University of Minnesota, 55455, Minneapolis, MN, USA

Authors and Affiliations

  1. Department of Materials Science and Engineering, Cornell University, 14853, Ithaca, NY, USA

    N. D. Theodore, T. L. Alford, C. B. Carter, J. W. Mayer & N. W. Cheung

  2. Department of Electrical and Computer Engineering, University of California at Berkeley, Berkeley, CA, USA

    N. W. Cheung

Authors
  1. N. D. Theodore
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. T. L. Alford
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. C. B. Carter
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. J. W. Mayer
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. N. W. Cheung
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Theodore, N.D., Alford, T.L., Carter, C.B. et al. TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon. Appl. Phys. A 54, 124–131 (1992). https://doi.org/10.1007/BF00323898

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00323898

PACS

Search

Navigation