Abstract
Enhanced diffusion of implanted arsenic impurities in silicon during subsequent thermal annealing can be interpreted in terms of a system of reaction-diffusion equations. It is shown that for high doses the local solubility limit can considerably influence the reactions between the defects involved and thus markedly change the effective diffusion of As donors. A similar effect can be brought about by the presence of predoped donors/acceptors, which also can significantly accelerate/retard the effective diffusion of As implants. Furthermore, an explanation of some precipitation/clustering processes during a rapid/slow cooling-down is proposed. Finally, several “contradictory” experimental results published previously will be shown to be compatible with the present model.
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References
J. Lindhard, M. Scharff, H.E. Schiøtt: Mat. Fys. Medd. Dan. Vid. Selsk. 33, No. 14 (1963)
E. Antoncik: To be published in Rad. Eff. Def. Solids
See e.g., A. Hunding, P.G. Sørensen: J. Math. Biol. 26, 27 (1988)
A.N. Larsen, S.Yu. Shiryaev, E.S. Sørensen, P. Tidemand-Petersson: Appl. Phys. Lett. 48, 1805 (1986)
S.Yu. Shiryaev, A.N. Larsen, E.S. Sørensen, P. Tidemand-Petersson: Nucl. Instrum. Methods B 19/20, (1987)
A.N. Larsen, K.K. Larsen, P.E. Andersen, B.G. Svensson: To be published in J. Appl. Phys. (1992) and references therein
A.N. Larsen, B. Christensen, S.Yu. Shiryaev: To be published in J. Appl. Phys. (1992)
E. Antoncik: To be published in Rad. Eff. Def. Solids
See e.g., P. Cappelletti, G.F. Cerofolini, G.U. Pignatel: Phil. Mag. A 46, 863 (1982)
A.N. Larsen, G. Weyer: Mater. Sci. Forum 83–87, 273 (1992)
In general, the use of an effective diffusion coefficient is subject to the condition that the system of reaction-diffusion equations, describing the interaction of various defects, can be reduced to a single effective diffusion equation simulating the diffusion of donors. If this cannot be done, the use of D eff is questionable
P.E. Andersen, A.N. Larsen, P. Tidemand-Petersson, G. Weyer: Appl. Phys. Lett. 53, 755 (1988)
K.C. Pandey, A. Erbil, G.A. Cargil III, R. Boehme, D. Vanderbilt: Phys. Rev. Lett. 61, 1282 (1988). See also a very recent paper by J.L. Allain, J.R. Regnard, A. Bourret, A. Parisini, A. Armigliato, G. Tourillon, S. Pizzini: Phys. Rev. B 46, 9434 (1992)
M. Derdour, D. Nobili, S. Solmi: J. Electrochem. Soc. 138, 857 (1991)
R.B. Fair, J.J. Wortman, J. Liu: J. Electrochem Soc. 131, 2387 (1984)
R.T. Hodgson, V. Deline, S.M. Mader, F.F. Morehead, J. Gelpey: Mat. Res. Soc. Symp. Proc. 23, 253 (1984)
S.R. Wilson, W.M. Paulson, R.B. Gregory, A.H. Hamdi, F.D. McDaniel: J. Appl. Phys. 55, 4162 (1984)
J. Narayan, O.W. Holland: J. Appl. Phys. 56, 2913 (1984)
R. Kalish, T.O. Sedgwick, S. Mader, S. Shatas: Appl. Phys. Lett. 44, 107 (1984)
R. Kalish, G.S. Oehrlein, V.R. Deline, S.A. Cohen: Nucl. Instrum. Methods B 7/8, 329 (1985)
R. Kwor, D.L. Kwong, C.C. Ho, B.Y. Tsaur, S. Baumann: J. Electrochem. Soc. 132, 1201 (1985)
T.O. Sedwick, A.E. Michel, S.A. Cohen, V.R. Deline, G.S. Oehrlein: Appl. Phys. Lett. 47, 848 (1985)
T.E. Seidel, D.J. Lischner, C.S. Pai, R.V. Knoell, D.M. Maher, D.C. Jacobson: Nucl. Instrum. Methods B 7/8, 251 (1985)
J.L. Hoyt, J.F. Gibbons: Mat. Res. Soc. Symp. Proc. 52, 15 (1986)
M.J. Hart, A.G.R. Evans, G.A.J. Amaratunga: Mat. Res. Soc. Symp. Proc. 71, 429 (1986)
M.Z. Numan, Z.H. Lu, W.K. Chu, D. Fathy, J.J. Wortmann: Mat. Res. Soc. Symp. Proc. 52, 31 (1986)
C.C. Ho, R. Kwor, K. Jones, C. Araujo, J. Gelpey: Proc. Electrochem. Soc. 88-16, 117 (1988)
D.K. Sadana: Proc. Electrochem. Soc. 88-16, 147 (1988)
T. Inada, S. Wakabayashi, H. Iwasaki: J. Appl. Phys. 69, 6665 (1991)
D. Mathiot, J.C. Pfister: J. Appl. Phys. 66, 970 (1989)
R. Kögler, E. Wieser, G. Otto, P. Knothe: Appl. Phys. A 51, 53 (1990) and references therein
See e.g., E. Antoncik: To be published in Nucl. Instrum. Methods B (1993) and references therein