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New approach in the monitoring and characterization of titanium nitride thin films

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Abstract

In situ and ex situ spectroscopic ellipsometry (SE), Raman spectroscopy (RS), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) have been used to study the stoichiometry and characterize TiNx thin films deposited by magnetron sputtering at various stoichiometries. In situ SE can provide parameters, such as the plasma energy, that can be utilized for monitoring of the film stoichiometry. Besides plasma energy, optical phonon position in RS was also found to be a sensitive probe of TiNx stoichiometry as detected by RS, XPS, and ex situ SE. Under these conditions, AES faces difficulties for reliable film characterization, and the complementary use of other techniques is required for determining the exact film stoichiometry.

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Authors and Affiliations

  1. Department of Physics, Aristotle University of Thessaloniki, 54006, Thessaloniki, Greece

    S. Logothetidis

  2. Mechanical Engineering Department, Materials Science and Engineering Program, Louisiana State University, 70803, Baton Rouge, Louisiana, USA

    E. I. Meletis

  3. Physics Division, School of Technology, Aristotle University of Thessaloniki, 54006, Thessaloniki, Greece

    G. Kourouklis

Authors
  1. S. Logothetidis
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  2. E. I. Meletis
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  3. G. Kourouklis
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Logothetidis, S., Meletis, E.I. & Kourouklis, G. New approach in the monitoring and characterization of titanium nitride thin films. Journal of Materials Research 14, 436–441 (1999). https://doi.org/10.1557/JMR.1999.0062

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  • DOI: https://doi.org/10.1557/JMR.1999.0062

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