Abstract
The expression used for electric field in the article being discussed is not appropriate for the experimental conditions, but there is a built-in electric field present that affects Sb diffusion. Thus the calculated values of D =i are reasonably within the experimental error of the data on which the calculations are based. Our conclusions that V − vacancies do not play an important role in Sb diffusion and that Sb–B pairs are responsible for retarded Sb diffusion in high-concentration B-doped Si are supported.
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References
R. J. Culbertson and S. J. Pennycook, in the Proceedings of the Materials Research Society, Boston, 1986, paper AP. 22.
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Fair, R.B. Reply to comments of F. F. Morehead. Journal of Materials Research 2, 539–541 (1987). https://doi.org/10.1557/JMR.1987.0539
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DOI: https://doi.org/10.1557/JMR.1987.0539