Abstract
The past decade has seen the growing use of ab initio methods to study theoretically not only the atomic and electronic structure of semiconductors but also their charge-transport properties. This chapter focuses on “intrinsic” charge transport (limited by scattering with phonons) and starts with a brief historical overview of early work, mostly based at first on the deformation potential theorem and, later, on empirical pseudopotentials and on the rigid-ion approximation, to calculate electron-phonon matrix elements in semiconductors. This historical overview is followed by an outline of the theoretical framework employed when using density functional theory. Having described the full-band Monte Carlo method to solve the Boltzmann transport equation, the chapter presents examples of the use of ab initio methods to study the low-field mobility, high-field transport, and device performance in silicon, group-III nitrides, and two-dimensional materials. Throughout the discussion attention is paid to the limitations of ab initio methods. Finally, the chapter discusses how ab initio methods are used to study the dielectric response of solids and charge transport in the quantum limit.
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Fischetti, M.V., Vandenberghe, W.G., Put, M.L.V.d., Gaddemane, G., Fang, J. (2023). Ab initio Methods for Electronic Transport in Semiconductors and Nanostructures. In: Rudan, M., Brunetti, R., Reggiani, S. (eds) Springer Handbook of Semiconductor Devices . Springer Handbooks. Springer, Cham. https://doi.org/10.1007/978-3-030-79827-7_42
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