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Near infrared polymer light-emitting diodes

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Chinese Science Bulletin

Abstract

High efficiency of near infrared polymer light-emitting diodes with bilayer structure was obtained. The diode structure is ITO/PEDOT/L1/L2/Ba/Al, where L1 is phenyl-substituted poly [p-phenylphenylene vinylene] derivative (P-PPV), L2 is 9,9-dioctylfluorene (DOF) and 4,7-bis (3-hexylthiophen)-2-yl-2,l,3-naphthothiadiazole (HDNT) copolymer (PFHDNT10). The electroluminescence (EL) spectrum of diodes from PFHDNT10 is at 750 nm located in the range of near infrared. The maximum external quantum efficiency is up to 2.1% at the current density of 35 mA/cm2. The improvement of the diode’s performances was considered to be the irradiative excitons confined in the interface between L1 and L2 layers.

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Authors and Affiliations

  1. Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, Institute of Polymer Optoelectronic Material and Devices, South China University of Technology, 510640, Guangzhou, China

    Zhang Yong, Yang Jian, Hou Qiong, Mo Yueqi, Peng Junbiao & Cao Yong

Authors
  1. Zhang Yong
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  2. Yang Jian
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  3. Hou Qiong
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  4. Mo Yueqi
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  5. Peng Junbiao
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  6. Cao Yong
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Corresponding author

Correspondence to Peng Junbiao.

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Yong, Z., Jian, Y., Qiong, H. et al. Near infrared polymer light-emitting diodes. Chin.Sci.Bull. 50, 957–960 (2005). https://doi.org/10.1360/04wb0128

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  • DOI: https://doi.org/10.1360/04wb0128

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