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A computer simulation of nucleation and growth of thin films

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Abstract

A three-dimensional kinetic Monte Carlo technique has been developed for simulating the nucleation and growth of thin films. This model involves incident atom attachment, surface diffusion of the atoms on the growing surface and atom detachment from the growing surface. It takes some new effects into account, such as a significant improvement in calculation of activation energy for the atom diffusion, which renders the model more reasonable. In addition three optimum temperatures and the consistency of their dependence on deposition rate have been found out; the dependence of the surface roughness and relative density on the deposition rate has been discussed; and the approximation of freezing neighbour atoms and periodic boundary conditions has been applied.

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Authors and Affiliations

  1. Key Laboratory of Opto-Electronic Technology and Intelligent Control, Ministry of Education, Lanzhou Jiaotong University, 730070, Lanzhou, China

    Zheng Xiaoping

  2. School of Physical Science and Technology, Lanzhou University, 730000, Lanzhou, China

    Zhang Peifeng, He Deyan & Liu Jun

  3. School of Chemistry and Chemistry Engineering, Lanzhou University, 730000, Lanzhou, China

    Ma Jiantai

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  1. Zheng Xiaoping
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  2. Zhang Peifeng
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  4. Liu Jun
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Correspondence to Zheng Xiaoping.

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Zheng, X., Zhang, P., He, D. et al. A computer simulation of nucleation and growth of thin films. Sci China Ser G: Phy & Ast 47, 442–451 (2004). https://doi.org/10.1360/03yw0220

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  • DOI: https://doi.org/10.1360/03yw0220

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