Abstract
The understanding and simulation of the nucleation of particles in thin substrates is of importance in many areas of technology. The deposition of dispersed particles requires the tuning of parameters to avoid agglomeration. Nucleation can be modeled with spherical or cylindrical morphologies. Parameters include heat transfer coefficients and the “under cooling”. A stable transient moving interface for radial growth is found using WOLFRAM. A quasi-steady-state solution results where the growth is stabilized. This state is important in the formation of various structures like in-situ growth for thin film devices and protective coatings. Preliminary simulations on some alloy systems indicate that phase segregation and nucleation are predictable from transient time-dependent equations like energy balance in MBPs. This is separate from using the Gibbs free energy curves used in steady-state CALPHAD type simulations. A discussion of the overlap with the Cahn–Hilliard equation is included.
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Abbreviations
- ∇:
-
Gradient operator
- ρ:
-
Density
- Cp:
-
Specific heat
- D., D(U):
-
Diffusion coefficient
- U:
-
Generic variable describing component value
- X, s:
-
Position coordinates
- K:
-
Thermal conductivity
- L:
-
Latent heat
- T:
-
Time
- MBP:
-
Moving boundary problem
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Basu, R. (2024). A Model of Particle Growth in Film Deposition. In: TMS 2024 153rd Annual Meeting & Exhibition Supplemental Proceedings. TMS 2024. The Minerals, Metals & Materials Series. Springer, Cham. https://doi.org/10.1007/978-3-031-50349-8_30
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DOI: https://doi.org/10.1007/978-3-031-50349-8_30
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