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Correction: Discover Nano (2023) 18:37 https://doi.org/10.1186/s11671-023-03816-6
Following the publication of the original article [1], we were informed that:
a. citations [34] and [35] on p. 11 of the article PDF should be changed to [33] and [34]
b. respective references should be added to the reference list:
The original article has been corrected.
Reference
Madadi D, Mohammadi S. Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study. Discover Nano 2023;18:37.
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Madadi, D., Mohammadi, S. Correction: Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study. Discover Nano 19, 26 (2024). https://doi.org/10.1186/s11671-024-03968-z
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DOI: https://doi.org/10.1186/s11671-024-03968-z