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A multi-value 3D crossbar array nonvolatile memory based on pure memristors

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Abstract

How to improve the storage density and solve the sneak path current problem has become the key to the design of nonvolatile memristive memory. In this paper, a high storage density and high reading/writing speed 3D crossbar array non-volatile memory based on pure memristors is proposed. The main works are as follows: (1) an extensible memristive cluster is proposed, (2) a memristive switch is designed, and (3) a 3D crossbar array non-volatile memory is constructed. The memory cell of the 3D crossbar array non-volatile memory is constructed by pure memristors and can be extended by adding memristor in a memristive cluster or adding memristive clusters in a memory cell to realize multi-value storage. The memristive switch can effectively reduce the sneak path current effect. The pure memristive memory cell solves the conflict between the storage density and sneak path current effect and greatly improves the storage density of memory cells. Furthermore, the 3D cross-array structure allows different memory cells on the same layer or different layers to be read and written in parallel, which greatly improves the speed of reading and writing. Simulations with PSpice verifies that the proposed memristive cluster can realize stable multi-value storage, has higher storage density, faster reading and writing speed, fewer input ports and output ports, better stability, and lower power consumption. Moreover, the structure proposed in this paper can also be used in the circuit design of the neuromorphic network, logic circuit, and other memristive circuits.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant no. 62171182) and Natural Science Foundation of Hunan Province (Grant no. 2021JJ30147).

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Authors and Affiliations

  1. College of Computer Science and Electronic Engineering, Hunan University, Changsha, 410082, China

    Jingru Sun, Kexin Kang, Qinghui Hong & Chunhua Wang

  2. School of Engineering and Computer Science, University of Hertfordshire, Hatfield, AL10 9AB, UK

    Yichuang Sun

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  1. Jingru Sun
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  2. Kexin Kang
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  4. Qinghui Hong
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  5. Chunhua Wang
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Correspondence to Jingru Sun.

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Sun, J., Kang, K., Sun, Y. et al. A multi-value 3D crossbar array nonvolatile memory based on pure memristors. Eur. Phys. J. Spec. Top. 231, 3119–3130 (2022). https://doi.org/10.1140/epjs/s11734-022-00576-9

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