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Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts

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Abstract

The paper presents the results of studying the nature of the energy levels of an electron in a quantum well of heterostructures AlAs/InxGa1−xAs/AlAs containing a thin InAs nanolayer. The dependences of these energy levels on the thickness En(b) of the InAs layer are analysed by numerical and analytical methods. An analytical formula for the dependence En(b) is obtained in the model of an infinitely deep well. The dependence of the energy levels on the thickness b of the InAs nanolayer found in the model of parabolic bands turned out to be strong and complex. In the model of nonparabolic bands, due to the growth of the electron mass with respect to energy, the number of energy levels in the well increased, and the En(b) dependences were noticeably suppressed. The nature and causes of these regularities are analysed.

Graphical abstract

Conduction band profile of AlAs/Inx Ga1−x As/InAs/InxGa1−xAs/AlAs (x = 0.53) heterostructures

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Data Availability Statement

The manuscript has associated data in a data repository. [Authors’ comment: The data that support the findings of this study are available from the corresponding author upon reasonable request].

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Acknowledgements

The work was performed on the basis of the Fundamental Research Grant Programs FZ-20200929243 “The Effect of Hot Electrons and Phonons in a Strong Electromagnetic Field on the Characteristics of Semiconductor Solar Photovoltaic Elements and Nanostructures”.

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  1. Namangan State University, 316 Uychi Street, 716019, Namangan, Uzbekistan

    Paziljon Baymatov, Bakhrom Abdulazizov & Makhmudjon Tokhirjonov

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  1. Paziljon Baymatov
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Correspondence to Makhmudjon Tokhirjonov.

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Baymatov, P., Abdulazizov, B. & Tokhirjonov, M. Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts. Eur. Phys. J. B 96, 118 (2023). https://doi.org/10.1140/epjb/s10051-023-00586-z

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